Subnanometer-accuracy z-position monitor mask for optical lithography

Abstract

A lithographic test pattern, the phase shift grating (PSG) z monitor, is introduced. Through the use of phase shift techniques, position errors of images in the z-direction translate into lateral shifts in the printed pattern. The lateral shifts are easily measurable using an overlay metrology tool. Each z monitor pattern in a test mask can be directly read for the sign and magnitude of the z error. When the experimental conditions, namely, the period of a PSG and a coherent factor of the lithography tool simultaneously satisfies a criterion of the asymmetric two-beam interference between the zeroth-order ray and either of the two first-order rays of diffraction, the linearity of a z-vs-overlay curve is always complete and the slope of the curve is constant everywhere in the image field. Using state-of-the-art overlay metrology tools, we realized subnanometer-order accuracy in the z measurement.