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Reflection Induced Voltage Change of Surface Emitting Laser for Optical Probing

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Abstract

We demonstrate a novel optical probing technique using the reflection-induced change in voltage of a GaAs vertical cavity surface emitting laser (VCSEL). We present the modeling and experiment of the VCSEL based probing. A two-dimensional image probing is successfully demonstrated.

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Author notes

  1. Kenichi Iga

    Present address: Japan Society for the Promotion of Science/Kogakuin University, 6 Ichiban-cho, Chiyoda-ku, Tokyo, 102-8471, Japan

Authors and Affiliations

  1. Microsystem Research Center, P&I Lab., Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan

    Jiro Hashizume, Satoshi Shinada, Fumio Koyama & Kenichi Iga

Authors
  1. Jiro Hashizume
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  2. Satoshi Shinada
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  3. Fumio Koyama
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  4. Kenichi Iga
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Corresponding author

Correspondence to Jiro Hashizume.

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Hashizume, J., Shinada, S., Koyama, F. et al. Reflection Induced Voltage Change of Surface Emitting Laser for Optical Probing. OPT REV 9, 186–188 (2002). https://doi.org/10.1007/s10043-002-0186-x

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  • DOI: https://doi.org/10.1007/s10043-002-0186-x

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