Abstract
The interdiffusion in a low-strained Si0.93Ge0.07/Si epilayer was analyzed by double-crystal X-ray diffraction. The interdiffusion was characterized by a low diffusion barrier of 1.81 eV with a diffusion constant of 4.3 × 10−5 cm2/sec, which indicates correlation with the stacking fault generated by the homoepitaxial growth of the Si layer prior to the growth of the strained SiGe layer. At the very low-strained layer, the driving force causing the interdiffusion is the concentration gradient, and the mechanism is self-diffusion of Si. Furthermore, the interdiffusion mechanisms were classified into three groups, depending on the Ge mole fraction x. For x < 0.2, the diffusion process in the SiGe alloy is similar to a self-diffusion of Si atoms, while, for 0.2 < x < 0.4, Ge atoms prefer to be diffused out from the alloy. Finally, for x > 0.4, Si atoms can be diffused into the alloy.
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Received: 22 April 1997 / Accepted: 4 June 1997
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Kim, K., Kim, H., Kim, J. et al. Solid-state interdiffusion mechanism in strained Si1–xGex/Si heterostructures. J Solid State Electrochem 1, 221–226 (1997). https://doi.org/10.1007/s100080050052
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DOI: https://doi.org/10.1007/s100080050052