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Quantitative detection of anodic oxygen evolution on solid state sintered silicon carbide under near ECM conditions

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Abstract

The present work examined the gas evolution on a solid-state sintered silicon carbide material (EKasic®D) at high anodic potentials (up to 120 V vs Ag/AgCl). By using the amperometric detection as well as the method of oxygen quenching, the part of anodic evolved oxygen could be determined for 75–95% of the total amount of consumed charge. The minor part of the total charge is consumed by oxide film formation (passive range) or material dissolution (transpassive range).

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Authors and Affiliations

  1. Fraunhofer Institut für Keramische Technologien und Systeme(IKTS) Dresden, Winterbergstraße 28, 01277, Dresden, Germany

    M. Schneider, L. Šimůnková & A. Michaelis

  2. Institut für Werkstoffwissenschaft (IfWW), Technical University of Dresden, Helmholtzstraße 7, 01062, Dresden, Germany

    N. Junker & A. Michaelis

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  1. M. Schneider
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  2. L. Šimůnková
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  3. N. Junker
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  4. A. Michaelis
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Correspondence to M. Schneider.

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Schneider, M., Šimůnková, L., Junker, N. et al. Quantitative detection of anodic oxygen evolution on solid state sintered silicon carbide under near ECM conditions. J Solid State Electrochem 24, 207–215 (2020). https://doi.org/10.1007/s10008-019-04479-z

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  • DOI: https://doi.org/10.1007/s10008-019-04479-z

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