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Physical properties of metal-doped ZnO thin films prepared by RF magnetron sputtering at room temperature

  • Hayet MahdhiEmail author
  • Z. Ben Ayadi
  • K. Djessas
Original Paper
  • 15 Downloads

Abstract

Transparent thin films of pure ZnO, Ca-doped ZnO (CZO), and Ga-doped ZnO (GZO) were deposited on glass by RF magnetron sputtering. The influence of calcium and gallium concentrations in zinc oxide (ZnO) films on structural, morphology, electrical, and optical properties of thin films were studied. XRD results show that the obtained films were with a hexagonal wurtzite structure and preferentially oriented perpendicular to the substrate surface. Atomic force microscopy (AFM) evidenced that the type of doping modifies the microstructure of thin films. The as-deposited films show a high transmittance in the visible range over 85%. The shift of the optical band gap of ZnO films with increasing Ca and Ga content suggests the enhancement of carrier concentration. At Ga-doped ZnO, the film has lowest resistivity of 3.8 × 10−3 cm, while the carrier concentration is highest (2.2 × 1020 cm−3).

Keywords

Ga-doped ZnO Ca-doped ZnO Magnetron sputtering Transparent conductive oxide Electrical and optical properties 

Notes

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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  1. 1.Laboratory of Physics of Materials and Nanomaterials applied at Environment (LaPhyMNE)Faculty of Sciences in GabesErriadh Manara ZrigTunisia
  2. 2.Physics Department, Faculty of ScienceJazan UniversityJazanSaudi Arabia
  3. 3.Processes, Materials and Solar Energy, Laboratory (PROMES-CNRS)University of PerpignanPerpignan CedexFrance

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