Abstract
A simple metal-semiconductor-metal device comprising TiO2 cast from a suspension of Degussa P25 and placed between two metal plates (Al/Al lap shears) demonstrated memristive-like resistive switching behaviour. A mechanism is proposed which relies upon the formation of p and n-type regions within the P25 semiconductor material ultimately leading to the formation of a p-n junction. This device also exhibited enhanced steady state currents upon the imposition of potential steps, most notably at higher potential magnitudes (both anodic and cathodic), indicating lack of ionic conduction.
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26 June 2019
The original version of this article contained a mistake.
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Acknowledgements
The authors gratefully acknowledge the award of a DIT Fiosraigh Dean of Graduate Studies award to R de Carvalho and COST Action MP1407 (e-MINDS).
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de Carvalho, R.C., Betts, A.J. & Cassidy, J.F. Short communication: a simple nanoparticle-based TiO2 memristor device and the role of defect chemistry in its operation. J Solid State Electrochem 23, 1939–1943 (2019). https://doi.org/10.1007/s10008-019-04239-z
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DOI: https://doi.org/10.1007/s10008-019-04239-z