Short communication: a simple nanoparticle-based TiO2 memristor device and the role of defect chemistry in its operation
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A simple metal-semiconductor-metal device comprising TiO2 cast from a suspension of Degussa P25 and placed between two metal plates (Al/Al lap shears) demonstrated memristive-like resistive switching behaviour. A mechanism is proposed which relies upon the formation of p and n-type regions within the P25 semiconductor material ultimately leading to the formation of a p-n junction. This device also exhibited enhanced steady state currents upon the imposition of potential steps, most notably at higher potential magnitudes (both anodic and cathodic), indicating lack of ionic conduction.
KeywordsTiO2 Degussa P25 Memristor Nanoparticles Point defects
The authors gratefully acknowledge the award of a DIT Fiosraigh Dean of Graduate Studies award to R de Carvalho and COST Action MP1407 (e-MINDS).
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