Short communication: a simple nanoparticle-based TiO2 memristor device and the role of defect chemistry in its operation

  • Rafaela C. de CarvalhoEmail author
  • Anthony J. Betts
  • John F. Cassidy
Short Communication


A simple metal-semiconductor-metal device comprising TiO2 cast from a suspension of Degussa P25 and placed between two metal plates (Al/Al lap shears) demonstrated memristive-like resistive switching behaviour. A mechanism is proposed which relies upon the formation of p and n-type regions within the P25 semiconductor material ultimately leading to the formation of a p-n junction. This device also exhibited enhanced steady state currents upon the imposition of potential steps, most notably at higher potential magnitudes (both anodic and cathodic), indicating lack of ionic conduction.


TiO2 Degussa P25 Memristor Nanoparticles Point defects 



The authors gratefully acknowledge the award of a DIT Fiosraigh Dean of Graduate Studies award to R de Carvalho and COST Action MP1407 (e-MINDS).


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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  • Rafaela C. de Carvalho
    • 1
    Email author
  • Anthony J. Betts
    • 1
  • John F. Cassidy
    • 1
    • 2
  1. 1.Applied Electrochemistry Group, FOCAS Research InstituteTechnological University Dublin, City CampusDublinIreland
  2. 2.School of Chemical and Pharmaceutical SciencesTechnological University Dublin, City CampusDublinIreland

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