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A mechanistic study of sulfur-induced passivity degradation of Alloy 800 in a simulated alkaline crevice environment at 300 °C

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Abstract

Sulfur-induced degradation of the passive film on Alloy 800 in a simulated alkaline crevice (AKC) environment at 300 °C was evaluated using electrochemical impedance spectroscopy (EIS), scanning electron microscopy (SEM), secondary ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES). The reduced sulfur species (mainly S−2) from thiosulfate was incorporated into the passive film, increasing the Ni/Cr ratio in the film. Film thickness was reduced from 700 nm in an alkaline crevice solution without thiosulfate to 400 nm in an AKC solution with thiosulfate. The results from EIS modeling using an electrochemical equivalent circuit (EEC) and point defect model (PDM) also confirmed that reduced sulfur species increased the dissolution rate of the passive layer.

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Acknowledgments

This work was supported by AECL and Natural Science Foundation of Tianjin (No. 14JCYBJC1770). We acknowledge the support of Dr. R.L. Tapping and Dr. P. Angell of AECL. The authors thank Dr. Anqiang He, Dr. Shihong Xu, and Dr. Dimitre Karpuzov of the Alberta Center for Surface Engineering and Science, University of Alberta, for performing AES, SEM, XPS and SIMS analyses.

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Authors and Affiliations

  1. Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta, Canada, T6G 2V4

    Da-Hai Xia, Yashar Behnamian, Xue-Yuan Chen & Jing-Li Luo

  2. The Canadian Nuclear Laboratories Chalk River Laboratories, Stn. 80, Chalk River, Ontario, Canada, K0J 1J0

    Stan Klimas

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  1. Da-Hai Xia
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  2. Yashar Behnamian
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  3. Xue-Yuan Chen
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  4. Jing-Li Luo
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Correspondence to Jing-Li Luo.

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Xia, DH., Behnamian, Y., Chen, XY. et al. A mechanistic study of sulfur-induced passivity degradation of Alloy 800 in a simulated alkaline crevice environment at 300 °C. J Solid State Electrochem 19, 3567–3578 (2015). https://doi.org/10.1007/s10008-015-2822-y

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  • DOI: https://doi.org/10.1007/s10008-015-2822-y

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