Abstract
CuCrO2 single crystal, elaborated by the flux method, is a narrow-band-gap semiconductor crystallizing in the delafossite structure with an indirect optical transition at 2.12 eV. The relatively longer Cu–Cu is consistent with the semi-conducting behavior. The conductivity in the (001) plans is thermally activated and occurs predominantly by small polaron hopping through mixed-valence states Cu+/2+ in conformity with a classical dielectric behavior. The activation energy (0.05 eV) gave an effective mass of 9 m o, indicating that the levels in the vicinity of the Fermi level E f are strongly localized. The oxide shows an excellent chemical stability over the whole pH range; the semi-logarithmic plot gave an exchange current density of 0.7 mA cm−2 and a corrosion potential of 0.18 V/SCE in KOH (0.5 M) electrolyte. The electrochemical study is confined in (001) plans, and reversible oxygen intercalation is evidenced from the cyclic voltammetry. The Mott–Schottky plot (C−2-V) is characteristic of p type conduction and exhibits a linear plot from which a flat band potential of +0.21 V/SCE and a holes density N A of 5.06 × 1014 cm−3 were obtained. The photocurrent is due to Cu+: d → d transition and the valence band is positioned at 5.34 eV below vacuum.
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Notes
Calculated from the lattice constant (0.3615 nm) of copper crystallizing in a face-centered cubic.
Determined from the relation \( {E_{\sigma }} = { }{e^4}m*/{ }2{(4\pi \varepsilon \varepsilon {\hbox{o}})^2},{\varepsilon_{\rm{o}}} \) being the dielectric constant of free space.
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Acknowledgments
This work was supported partially by the Technical and Scientific Research Centre of Physico-Chemical Analysis (CRAPC). The authors would like to thank Dr R. Brahimi for comments concerning the structure refinement
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Ketir, W., Saadi, S. & Trari, M. Physical and photoelectrochemical characterization of CuCrO2 single crystal. J Solid State Electrochem 16, 213–218 (2012). https://doi.org/10.1007/s10008-011-1307-x
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DOI: https://doi.org/10.1007/s10008-011-1307-x