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Hybrid functional RuO2–Al2O3 thin films prepared by atomic layer deposition for inkjet printhead

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Abstract

Hybrid functional RuO2–Al2O3 thin films were prepared by atomic layer deposition using bis(ethylcyclopentadienyl)ruthenium (Ru(EtCp)2) and trimethyl aluminum (TMA). The intermixing ratios between RuO2 and Al2O3 in the RuO2–Al2O3 thin films were controlled from (RuO2)0.16–(Al2O3)0.84 to (RuO2)0.72–(Al2O3)0.28. With the RuO2 intermixing ratio less than 0.43, both temperature coefficient of resistance (TCR) values and resistivities were abruptly changed. The TCR values for RuO2–Al2O3 thin films were changed from −381 to −62.3 ppm/K by changing the RuO2 intermixing ratios from 0.43 to 0.83, while the resistivities were also changed from 1,200 to 243 μΩ·cm. Moreover, the change in the TCR of RuO2–Al2O3 thin films was below 127 ppm/K even after O2 annealing process at 700 °C. Moreover, it showed that RuO2–Al2O3 thin films had a high corrosion resistance due to the highly corrosion-resistive RuO2 and Al2O3.

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Acknowledgments

This work was supported by a grant from the National Core Research Center (NCRC) Program (R15-2006-022-01002-0) funded by KOSEF and MOST.

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  1. National Core Research Center for Hybrid Materials Solution, Pusan National University, Busan, 609-735, South Korea

    Se-Hun Kwon & Kwang-Ho Kim

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  1. Se-Hun Kwon
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  2. Kwang-Ho Kim
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Correspondence to Kwang-Ho Kim.

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Kwon, SH., Kim, KH. Hybrid functional RuO2–Al2O3 thin films prepared by atomic layer deposition for inkjet printhead. J Solid State Electrochem 14, 225–229 (2010). https://doi.org/10.1007/s10008-009-0836-z

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  • DOI: https://doi.org/10.1007/s10008-009-0836-z

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