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Optimization of electrochemical aspects for epitaxial depositing nanoscale ZnSe thin films

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Abstract

Studies of the electrochemical optimization of ZnSe thin film deposition on polycrystalline Au substrates using electrochemical atomic layer epitaxy are reported. Electrochemical aspects were characterized by means of cyclic voltammetry, differential pulse voltammetry, and coulometry. To study the growth mechanism of the underpotential deposition in the formation of ZnSe, the effects of Zn and Se deposition potentials and a Se-stripping potential were adjusted to optimize the deposition program. The deposit, grown using the optimized program, was proved to be a single-phase ZnSe compound with a strong (220)-preferred orientation by X-ray diffraction analysis, and scanning electronic microscopy observation shows the deposit consisted of nanoscale particles with an average size about 100 nm. The right 1:1 stoichiometric ratio of Zn to Se according to the coulometry suggests that ZnSe is formed.

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Acknowledgments

The authors acknowledge the support of the Special Doctoral Foundation of the Ministry Education of China (Grant no. 20030730014.1).

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Authors and Affiliations

  1. Department of Chemistry, Lanzhou University, Lanzhou, 730000, People’s Republic of China

    Xin Zhang, Xuezhao Shi & Chunming Wang

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  1. Xin Zhang
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  2. Xuezhao Shi
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  3. Chunming Wang
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Correspondence to Chunming Wang.

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Zhang, X., Shi, X. & Wang, C. Optimization of electrochemical aspects for epitaxial depositing nanoscale ZnSe thin films. J Solid State Electrochem 13, 469–475 (2009). https://doi.org/10.1007/s10008-008-0587-2

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  • DOI: https://doi.org/10.1007/s10008-008-0587-2

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