Abstract
Alkaline solution, especially diphosphate solutions, can be used as electrolytes for the galvanic deposition of p-type semiconductors. A ternary Bi–Sb–Te alloy semiconductor was deposited at a Ni-covered cathode surface at potentials lower than −0.6 V (Ag/AgCl), under potentiostatic condition in well-stirred solutions. Additionally, it was possible to deposit antimony telluride, a binary p-semiconductor, from the ternary electrolyte. The kinetics of the process was investigated by cyclic voltammetric measurements. The influence of the electrolyte convection on the electrocrystallization was analysed with the help of rotating disc electrode. The semiconductor layers were characterized by electrochemical impedance spectroscopy.
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Acknowledgements
This study was supported by the BMWi (Bundesministerium für Wirtschaft) and the AiF (Arbeitsgemeinschaft industrieller Forschungsvereinigungen “Otto von Guericke” e. V.) research no. 13936 BR. The authors are grateful to Dr. M. Stölzer (Physical Department of the Martin Luther University, Halle, Germany) for the preparation of the Bi–Sb–Te reference samples and Dr. C. Blank (Institute of Material Science of the Technical University Dresden, Germany) for carrying out of optical microscopy and the excellent Sb2Te3 layer on substrate preparation for SEM. The wafer material was supplied by Semiconductor Technology and Microsystems Laboratory, Technical University Dresden.
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Tittes, K., Plieth, W. Electrochemical deposition of ternary and binary systems from an alkaline electrolyte—a demanding way for manufacturing p-doped bismuth and antimony tellurides for the use in thermoelectric elements. J Solid State Electrochem 11, 155–164 (2007). https://doi.org/10.1007/s10008-006-0217-9
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DOI: https://doi.org/10.1007/s10008-006-0217-9