Journal of Molecular Modeling

, Volume 19, Issue 5, pp 2091–2095 | Cite as

Simulation of laser radiation effects on low dimensionality structures

  • Iliana María RamírezEmail author
  • Jorge Iván Usma
  • Francisco Eugenio López
Original Paper


This paper presents a study on a system comprised of a low-dimensional structure (Ga1-xAlxAs and GaAs quantum well wire), an intense laser field and an applied magnetic field in axial direction, resulting in a modified structure by interaction with the laser field. A variation of the concentration of aluminum is considered. So, the characteristics of the semiconductor such as the effective mass and width of the forbidden band vary due to the aluminum concentration. The electronic Landé factor control by changing of both intensity and frequency of a laser field on cylindrical quantum well wire was also reported. We use the laser dressed approximation for the treated “quantum wire + laser” system as quantum wire in the absence of radiation but with parameter (electronic barrier height and electronic effective mass) renormalized by laser effects. We consider a magnetic field applied in the parallel direction of symmetric axis of the quantum well wire. We take into account non-parabolicity and anisotropy effects on the conduction band by Ogg-McCombe Hamiltonian.


Landé Factor Laser dressing Magnetic field Quantum well wire Semiconductors 


  1. 1.
    Zutic I, Fabian J, Das Sarma S (2004) Spintronics: fundamentals and applications. Rev Mod Phys 76:323–410CrossRefGoogle Scholar
  2. 2.
    Brandi HS, Latgé A, Oliveira LE (1998) Laser-dressed-band approach to shallow-impurity levels of semiconductor heterostructures. Solid State Commun 107:31–34CrossRefGoogle Scholar
  3. 3.
    Brandi HS, Latgé A, Oliveira LE (2001) Laser effects in semiconductor heterostructures within an extended dressed-atom approach. Physica B 302–303:64–71CrossRefGoogle Scholar
  4. 4.
    Brandi HS, Latgé A, Oliveira LE (2001) Laser dressing effects in low-dimensional semiconductor systems. Solid State Commun 117:83–87CrossRefGoogle Scholar
  5. 5.
    Brandi HS, Latgé A, Oliveira LE (2002) Laser efects in Semiconductor heterostructures within an extended dressed-atom approach. Braz J Phys 32:262–265CrossRefGoogle Scholar
  6. 6.
    Bhowmik D, Bandyopadhyay S (2009) Gate control of the spin-splitting energy in a quantum dot: application in single qubit rotation. Physica E 41:587–592CrossRefGoogle Scholar
  7. 7.
    Akahane K, Yamamoto N, Kawanishi T (2009). Fabrication of highly stacked quantum dot laser. Conference on Quantum electronics and Laser Science, 1–2, San José, CAGoogle Scholar
  8. 8.
    López FE, Reyes-Gómez H, Brandi HS, Porras-Montenegro N, Oliveira LE (2009) Laser-dressing effects on the electron g Factor in low-dimensional semiconductor systems under applied magnetic fields. J Phys D: Appl Phys 42:115304. doi: 10.1088/0022-3727/42/11/115304 CrossRefGoogle Scholar
  9. 9.
    Reyes-Gómez E, Raigoza N, Oliveira LE (2008) Effects of hydrostatic pressure an aluminum concentration on the conduction-electron g Factor in GaAs-(Ga, Al)As quantum wells under in-plane magnetic fields. Phys Rev B 77:115308–115314CrossRefGoogle Scholar
  10. 10.
    McCombe BO (1969) Infrared studies of combined resonance in n-type InSb. Phys Rev 181:1206CrossRefGoogle Scholar
  11. 11.
    Ogg NR (1966) Conduction-band g Factor anisotropy in indium antimonide. Proc Phys Soc 89:431–442CrossRefGoogle Scholar
  12. 12.
    Kane OE (1980) In narrow gap semiconductors. Physics and applications. In: Zawadzki W (ed), Lecture notes in physics, vol. 133. Springer, BerlinGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 2012

Authors and Affiliations

  • Iliana María Ramírez
    • 1
    Email author
  • Jorge Iván Usma
    • 1
  • Francisco Eugenio López
    • 1
  1. 1.ITM, Institución UniversitariaMedellinColombia

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