Abstract
Highly sensitive methods of the detection of the electron paramagnetic resonance (EPR) spectra based on the spin-dependent microwave photoconductivity were applied for investigation of the point defects in silicon. The specific features and properties of the excited triplet (spin S = 1) states of defects responsible for spin-dependent recombination of photo excited carriers are considered. The main attention is given to study such defects as oxygen + vacancy complexes and carbon related centers dominantly produced by irradiation.
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Acknowledgments
This work was supported by Grant of the Government of Russia, Project 14.Z50.31.0021 and partly by the Russian Foundation for Basic Research, (project no. 15-02-06208).
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Vlasenko, L.S. Effects of Spin-Dependent Recombination and EPR Spectroscopy of the Excited Triplet States of Point Defects in Silicon. Appl Magn Reson 47, 813–822 (2016). https://doi.org/10.1007/s00723-016-0799-z
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DOI: https://doi.org/10.1007/s00723-016-0799-z