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Influence of Formation Conditions on Structure and Properties of Paramagnetic Centers in Polymorphous Silicon Films

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Abstract

Paramagnetic properties of two series of polymorphous silicon thin films deposited by plasma-enhanced chemical vapor deposition with variation of silane and hydrogen gas mixture pressure and substrate temperature have been studied by means of electron paramagnetic resonance (EPR) spectroscopy. For the first time EPR signal with g-tensor values g 1 = 1.9984, g 2 = 1.9890, g 3 = 1.9790 was detected in the polymorphous silicon structure. We have attributed this signal to the electrons trapped in conduction band tail states at the interface between nanocrystals and/or at the grain boundaries between silicon nanocrystals. An activation energy of electron transition from band tail states to the conduction band was estimated approximately to 40 meV. Observed changes of the paramagnetic center concentration vs substrate temperature and gas pressure in the reaction chamber during polymorphous silicon film preparation are discussed.

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Acknowledgments

This work was supported by the Ministry of Education and Science of the Russian Federation (no 14.604.21.0085; Identification number RFMEFI60414 X 0085). We are grateful to Prof. P. Roca i Cabarrocas (Ecole polytechnique, France) for the sample preparation. The measurements has been done using the facilities of the Collective Use Center at the Moscow State University.

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Authors and Affiliations

  1. M.V. Lomonosov Moscow State University, 119991, Moscow, Russia

    E. A. Konstantinova, P. A. Forsh & P. K. Kashkarov

  2. National Research Center Kurchatov Institute, 123182, Moscow, Russia

    E. A. Konstantinova, A. V. Emelyanov, P. A. Forsh & P. K. Kashkarov

  3. Faculty of Nano-, Bio-, Information and Cognitive Technologies, Moscow Institute of Physics and Technology, Dolgoprudny, 141700, Moscow Region, Russia

    E. A. Konstantinova & P. K. Kashkarov

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  1. E. A. Konstantinova
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  2. A. V. Emelyanov
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  3. P. A. Forsh
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  4. P. K. Kashkarov
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Correspondence to E. A. Konstantinova.

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Konstantinova, E.A., Emelyanov, A.V., Forsh, P.A. et al. Influence of Formation Conditions on Structure and Properties of Paramagnetic Centers in Polymorphous Silicon Films. Appl Magn Reson 47, 693–700 (2016). https://doi.org/10.1007/s00723-016-0772-x

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  • DOI: https://doi.org/10.1007/s00723-016-0772-x

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