Abstract
The results of experimental investigations of electron spin resonance (ESR) spectra of manganese impurity ions in a GaAs:Mn system are presented. The studies are done for various a Fermi level position relative to valence band edge in the system. Characteristic defects for the system that give rise to lines with g factors of 5.62 and 2.81 in the ESR spectra are studied in some detail. The experimental results are discussed in the framework of a previously developed model with a double defect involving the impurity ion. The “3d5 + hole” model is a special case of the double defect model in this system. An analytical expression for the covalent renormalization of the g factor of an ESR line in this system is obtained.
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Yakubenya, S.M., Shtel’makh, K.F. About anomalous g factor value of Mn-related defects in GaAs:Mn. Appl Magn Reson 47, 671–684 (2016). https://doi.org/10.1007/s00723-015-0746-4
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DOI: https://doi.org/10.1007/s00723-015-0746-4