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ONP Spectroscopy of Defects in Silicon

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Abstract

Optical nuclear polarization technique is used to study metastable properties of the gold donor center in silicon. A model of a deep defect’s symmetry changing C 3V  → C 1h  → D 2d with its charge state (D− → D0 → D+) is proposed to account for the observed optically induced quenching and regeneration of Au0 centers.

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Acknowledgments

The work was supported by the programme of fundamental studies of the Presidium of the Russian Academy of Sciences “Quantum Physics of Condensed Matter” (grant 9.12); program of the Swiss National Science Foundation (grant IZ73Z0_127945/1); the Federal Targeted Program on Research and Development in Priority Areas for the Russian Science and Technology Complex in 2007–2012 (contract no. 02.514.11.4074), the Seventh Framework Program Marie Curie Actions PIRSES-GA-2009-246784 project SPINMET.

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  1. Ioffe Physical-Technical Institute, 194021, St.Petersburg, Russia

    N. T. Bagraev & I. S. Polovtsev

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  1. N. T. Bagraev
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  2. I. S. Polovtsev
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Correspondence to N. T. Bagraev.

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Bagraev, N.T., Polovtsev, I.S. ONP Spectroscopy of Defects in Silicon. Appl Magn Reson 40, 387–393 (2011). https://doi.org/10.1007/s00723-011-0216-6

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  • DOI: https://doi.org/10.1007/s00723-011-0216-6

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