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An Effect of Irradiation with Trivalent Boron Ions on Pinning in Bi2Sr2CaCu2O8 Thin Films as Revealed by MWA and Hall-Probe Measurements

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Abstract

Bi2Sr2CaCu2O8 thin films 200 nm thick were irradiated with 120 keV trivalent boron ions with the dose ranging from 1011 to 1014 ion/cm2. The critical parameters of the samples prior and after irradiation were monitored by non-resonance modulated microwave absorption and Hall-probe techniques. For low doses of 1011–1012 ion/cm2, a slight increase in the critical current density and expansion of the area of the non-dissipative transport current flow were revealed. Such results are explained by the formation of separate areas of displaced atoms, which serve as effective pinning centers. The positive effects of irradiation faded away with dose increase of up to 1013–1014 ion/cm2. This is due to overlap of radiation-induced defects and weak pinning on them.

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  1. Zavoisky Physical-Technical Institute, Russian Academy of Sciences, Sibirsky tract 10/7, 420029, Kazan, Russian Federation

    N. Yu. Panarina, V. Yu. Petukhov & Yu. I. Talanov

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  1. N. Yu. Panarina
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  2. V. Yu. Petukhov
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  3. Yu. I. Talanov
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Correspondence to N. Yu. Panarina.

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Panarina, N.Y., Petukhov, V.Y. & Talanov, Y.I. An Effect of Irradiation with Trivalent Boron Ions on Pinning in Bi2Sr2CaCu2O8 Thin Films as Revealed by MWA and Hall-Probe Measurements. Appl Magn Reson 40, 377–386 (2011). https://doi.org/10.1007/s00723-011-0212-x

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  • DOI: https://doi.org/10.1007/s00723-011-0212-x

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