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EPR and ENDOR Studies of Shallow Donors in SiC

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Abstract

Recent progress in the investigation of the electronic structure of the shallow nitrogen (N) and phosphorus (P) donors in 3C–, 4H– and 6H–SiC is reviewed with focus on the applications of magnetic resonance including electron paramagnetic resonance (EPR) and other pulsed methods such as electron spin echo, pulsed electron nuclear double resonance (ENDOR), electron spin-echo envelope modulation and two-dimensional EPR. EPR and ENDOR studies of the 29Si and 13C hyperfine interactions of the shallow N donors and their spin localization in the lattice are discussed. The use of high-frequency EPR in combination with other pulsed magnetic resonance techniques for identification of low-temperature P-related centers in P-doped 3C–, 4H– and 6H–SiC and for determination of the valley–orbit splitting of the shallow N and P donors are presented and discussed.

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Acknowledgments

Support from the Swedish Energy Agency, the Swedish Foundation for Strategic Research, the Swedish Research Council, The Knut and Alice Wallenberg Foundation, the Grant-in-Aid for Scientific Research in Priority Areas “Semiconductor Nanospintronics” (Grant No. 16031202) of the Ministry of Education, Culture, Sports, Science and Technology of Japan and the Gaikokujin kenkyuin program at University of Tsukuba is acknowledged.

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Authors and Affiliations

  1. Department of Physics, Chemistry and Biology, Linköping University, 581 83, Linköping, Sweden

    N. T. Son, I. G. Ivanov, A. Henry & E. Janzén

  2. Graduate School of Library, Information and Media Studies, University of Tsukuba, 1-2 Kasuga, Tsukuba, Ibaraki, 305-8550, Japan

    J. Isoya & T. Umeda

  3. Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma, 370-1292, Japan

    T. Ohshima

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  1. N. T. Son
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Son, N.T., Isoya, J., Umeda, T. et al. EPR and ENDOR Studies of Shallow Donors in SiC. Appl Magn Reson 39, 49–85 (2010). https://doi.org/10.1007/s00723-010-0134-z

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