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Investigation of Ta/Ni bilayered ohmic contacts on n-type SiC single-crystal substrate

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Abstract

The interfacial reactions between a Ta/Ni bilayered film and SiC single-crystal substrate during annealing at 650–1,100 °C were investigated. It was found that H-Ni2Si (hexagonal Ni2Si) and TaC formed at the interface as a result of thermal annealing. A small amount of free C atoms diffused outwards the surface, leading to the formation of carbon vacancies that could act as electron donors. The electrical properties of the contacts showed that ohmic behavior was observed for the sample annealed above 800 °C. The specific contact resistivity was determined to be as low as 4.4 × 10−4 Ω cm2 at 1,100 °C.

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Acknowledgments

The financial support by the National Natural Science Foundation of China (Grant No. 50772012 and 50972010) and the Fundamental Research Funds for the Central Universities (FRF-TP-09-021B) is gratefully acknowledged.

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Authors and Affiliations

  1. School of Chemical and Biological Engineering, University of Science and Technology Beijing, Beijing, 100083, China

    Ruifang Li, Zhongnan Guo, Jingjing Yang, Xiaopeng Zeng & Wenxia Yuan

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  1. Ruifang Li
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  2. Zhongnan Guo
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  3. Jingjing Yang
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  4. Xiaopeng Zeng
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  5. Wenxia Yuan
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Correspondence to Wenxia Yuan.

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Dedicated to Prof. Dr. Herbert Ipser on the occasion of his 65th birthday.

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Li, R., Guo, Z., Yang, J. et al. Investigation of Ta/Ni bilayered ohmic contacts on n-type SiC single-crystal substrate. Monatsh Chem 143, 1329–1334 (2012). https://doi.org/10.1007/s00706-012-0725-5

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  • DOI: https://doi.org/10.1007/s00706-012-0725-5

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