Abstract.
Titanium oxide and zirconium oxide thin films deposited on silicon substrates were characterised using electron probe microanalysis (EPMA), Rutherford backscattering spectroscopy (RBS), time-of-flight elastic recoil detection analysis (TOF-ERDA) and scanning photoelectron microscopy (SPEM). The composition and mass thickness of the films were determined and the results of different methods compared. It was revealed that the synchrotron radiation used for SPEM studies caused considerable modification of zirconia films grown at low temperatures.
Similar content being viewed by others
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Sammelselg, V., Rauhala, E., Arstila, K. et al. Study of Thin Oxide Films by Electron, Ion and Synchrotron Radiation Beams. Mikrochim Acta 139, 165–169 (2002). https://doi.org/10.1007/s006040200056
Issue Date:
DOI: https://doi.org/10.1007/s006040200056