Abstract
This paper describes a technique for fabricating a LIGA mask that offers good compatibility with the silicon IC process. X-ray exposure can be eliminated from the LIGA mask-fabrication process, so that LIGA masks can be fabricated with existing silicon IC process equipment. A gold absorber pattern, 2 μm wide and 10 μm thick, has been successfully fabricated by combining a three-layer resist-patterning process with the electroplating process. Improvements in both the mask structure and fabrication process alleviate the problems of dust in a cleanroom and contamination in the etching chamber.
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Received: 25 August 1997/Accepted: 23 September 1997
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Suzuki, K., Sugiyama, S. Silicon IC compatible LIGA mask-fabrication process. Microsystem Technologies 4, 7–11 (1997). https://doi.org/10.1007/s005420050082
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DOI: https://doi.org/10.1007/s005420050082