Abstract
In this paper, the authors have proposed the prospect of Graphene/SiNW vertically doped p-i-n Photo-detector in infrared wavelength region. The photo-detectors based on Multi Graphene Layer/SiNW and Multi Graphene Layer/Multi SiNW have been designed by the inclusion of SiNW in between the top and bottom layer of the devices. The inherent properties of the proposed devices are improved significantly by the inclusion of Multiple Graphene Layer into the top and bottom layer of the active region. The performance of the proposed p-i-n Photo-detectors are analyzed by developing a Quantum Corrected Schrodinger–Poisson DD model (QCSP-DD model). The validity of the developed QCSP-DD model is established by comparing the results of the experimental and simulation observations under alike operating conditions. After establishing the validity, QCSP-DD model is used to analyze the electrical and optical characteristics of the proposed p-i-n photo-detectors and the results are compared with SiNW photo-detector at the same operating wavelength. The analysis reveals that the proposed photo-detectors outperforms its SiNW counterpart in terms of external and internal quantum efficiency (0.71 and 0.77 for SiNW; 0.81 and 0.84 for Multi Graphene Layer/SiNW; 0.90 and 0.96 for Multi Graphene Layer/Multi SiNW) and photo-responsivity (0.71A/W for SiNW; 0.76A/W for Multi Graphene Layer/SiNW; 0.86A/W for Multi Graphene Layer/Multi SiNW) for optical radiation with IR source at 1800 nm wavelength. Recently, the improvement of performance of the photo-detector for accurate IR detection is a huge challenge to the researchers. In this research work, the authors have dealt with this issue by developing a novel structure of Graphene/SiNW photo-detectors and analyzing the characteristics of the said photo-detector by newly developed QCSP-DD model.
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The authors confirm contribution to the paper as follows: device design and methodology: S.Bhattacharya, A.Kundu; analysis and interpretation of results: S.Bhattacharya, A.Kundu, Shajith D. Nair, A.Chakraborty, A.Sarkar, M.Mukherjee; draft manuscript preparation: S.Bhattacharya, A.Kundu. All authors reviewed the results and approved the final version of the manuscript.
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Bhattacharya, S., Kundu, A., Nair, S.D. et al. Design and analysis of photo-electrical characteristics of graphene/Si-nanowire photo-detector: a potential photo-detector for applications in IR detection. Microsyst Technol (2024). https://doi.org/10.1007/s00542-024-05687-y
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DOI: https://doi.org/10.1007/s00542-024-05687-y