Abstract
This paper designs and analyzes a novel RF MEMS capacitive switch with a high on/off capacitance ratio and low pull-in voltage. Compared with general capacitive RF MEMS switches, the switch adopts a new type of spring support structure, which reduces the spring coefficient of elasticity and forms a low pull-in voltage. By adding an H-shaped floating metal layer above the switch dielectric layer, the on/off capacitance ratio is improved without affecting the predetermined structure of the switch and without thin dielectrics or high dielectric constant materials. Finally, the pull-in voltage of the switch is 4.4 V, and the switching time is 22 μs. When the switch operates at 27 GHz, the isolation of the switch is – 50 dB, the insertion loss is − 0.2 dB, and the switch capacitance ratio is 89. The designed switch shows good working performance.
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References
Al-Dahleh R, Mansour RR (2010) High-capacitance-ratio warped-beam capacitive MEMS switch designs. J Microelectromech Syst 19(3):538–547. https://doi.org/10.1109/JMEMS.2010.2048012
Angira M, Rangra K (2015) Performance improvement of RF-MEMS capacitive switch via asymmetric structure design. Microsyst Technol 21(7):1447–1452. https://doi.org/10.1007/s00542-014-2222-8
Angira M, Sundram GM et al (2013) On the investigation of an interdigitated, high capacitance ratio shunt RF-MEMS switch for X- band applications. Tech Proceed 2013 NSTI Nanotechnol Conf Expo NSTI Nanotech 2:189
Ansari HR, Kordrostami Z (2020) Development of a low stress RF MEMS double-cantilever shunt capacitive switch. Microsyst Technol 26:2739–2748. https://doi.org/10.1007/s00542-020-04838-1
Bansal D, Bajpai A, Kumar P, Kaur M, Kumar A (2020) Effect of stress on pull-in voltage of RF MEMS SPDT switch. IEEE Trans Elect Dev 67(5):2147–2152. https://doi.org/10.1109/TED.2020.2982667
Dalal K, Singh T, Singh PK (2021) Optimized vertical RF-MEMS switch design with a small actuation voltage. Analog Integr Circ Sig Process 108:165–171. https://doi.org/10.1007/s10470-021-01846-7
Deng K, Yang F, Deng Z et al (2021) Analysis and design of a novel high capacitance ratio and low actuation voltage RF MEMS switch. Microsyst Technol 27(7):2803–2813. https://doi.org/10.1007/s00542-020-05070-7
Deng Z, Wang Y et al (2022) Novel high isolation and high capacitance ratio RF MEMS switch: design analysis and performance verification. Micromachines 13:646. https://doi.org/10.3390/mi13050646
Fernandez-Bolanos Badia M, Buitrago E, Ionescu AM (2012) RF MEMS shunt capacitive switches using AlN compared to Si3N4 dielectric. J Microelectromech Syst 21(5):1229–1240. https://doi.org/10.1109/JMEMS.2012.2203101
Fouladi S, Mansour RR (2010) Capacitive RF MEMS switches fabricated in standard 0.35 μm CMOS technology. IEEE Trans Microwave Theory Tech 58(2):478–486. https://doi.org/10.1109/TMTT.2009.2038446
Gopalan A (2018) Kommuri UK (2018) Design and development of miniaturized low voltage triangular RF MEMS switch for phased array application. Appl Surf Sci 449:340–345. https://doi.org/10.1016/j.apsusc.2018.02.210
Kumari R, Angira M (2022) (2022) FEM simulation and material selection for enhancing the performance of a RF-MEMS capacitive switch. J Comput Electron 21:814–825. https://doi.org/10.1007/s10825-022-01905-w
Ma LY, Nordin AN, Soin N (2018) A novel design of a low-voltage low-loss T-match RF MEMS capacitive switch. Microsyst Technol 24:561–574. https://doi.org/10.1007/s00542-017-3577-4
Mafinejad Y, Kouzani A, Mafinezhad K et al (2017) Low insertion loss and high isolation capacitive RF MEMS switch with low pull-in voltage. Int J Adv Manuf Technol 93:661–670. https://doi.org/10.1007/s00170-017-0558-9
Maninder K, Bansal D, Soni S et al (2019) (2019)On characterization of symmetric type capacitive RF MEMS switches. Microsyst Technol 25:729–734. https://doi.org/10.1007/s00542-018-4006-z
Meriam JL, Kraige LG (2011) Engineering mechanics: statics. Wiley, USA
Mousavi M, Alzgool M, Towfighian S (2021) Electrostatic levitation: an elegant method to control MEMS switching operation. Nonlinear Dyn 104:3139–3155. https://doi.org/10.1007/s11071-021-06499-9
Persano A, Quaranta F, Cola A et al (2010) Ta2O5 thin films for capacitive RF MEMS switches. J Sens. https://doi.org/10.1155/2010/487061
Rao KS, Sailaja BVS, Vineetha KV et al (2021a) Design and analysis of asymmetric structure capacitive RF MEMS shunt switch. Microsyst Technol 27:503–513. https://doi.org/10.1007/s00542-018-4039-3
Rao KS, Kumar PA, Guha K et al (2021b) (2021) Design and simulation of fixed–fixed flexure type RF MEMS switch for reconfigurable antenna. Microsyst Technol 27:455–462. https://doi.org/10.1007/s00542-018-3983-2
Rebeiz GM (2003) RF MEMS: theory, design, and technology. Wiley
Saberhosseini SS, Azizollah Ganji B et al (2021) The mechanical modeling of a special variable MEMS capacitor. Microsyst Technol 27(3):813–820. https://doi.org/10.1007/s00542-020-04969-5
Sharaf A, Nasr A, Elshurafa AM et al (2022) Design analysis and simulation of a digital RF MEMS varactor with high capacitive ratio. Microsyst Technol 28:1831–1844. https://doi.org/10.1007/s00542-022-05318-4
Sravani KG, Narayana TL, Guha K et al (2021) Role of dielectric layer and beam membrane in improving the performance of capacitive RF MEMS switches for Ka-band applications. Microsyst Technol 27:493–502. https://doi.org/10.1007/s00542-018-4038-4
Xu Y, Tian Y, Zhang B et al (2018) A novel RF MEMS switch on frequency reconfigurable antenna application. Microsyst Technol 24:3833–3841. https://doi.org/10.1007/s00542-018-3863-9
Zareie H, Rebeiz GM (2013) High-power RF MEMS switched capacitors using a thick metal process. IEEE Trans Microw Theory Tech 61(1):455–463. https://doi.org/10.1109/TMTT.2012.2226744
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Deng, Z., Lai, C., Zhou, J. et al. Design and analysis of a novel low RF MEMS switch with low pull-in voltage and high capacitance ratio. Microsyst Technol 29, 809–821 (2023). https://doi.org/10.1007/s00542-023-05459-0
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DOI: https://doi.org/10.1007/s00542-023-05459-0