Abstract
This research work investigates the impact of gate recessing on DC, RF, and noise parameters of 6H-SiC-based Al0.30Ga0.70 N/GaN HEMT. DC, RF and Noise parameters have been discussed in detail for the proposed device. The proposed HEMT exhibits good DC, RF and Noise parameters. DC parameters namely maximum drain current (IDMAX), threshold voltage (Vt) and transconductance (gm) have been analyzed with useful results. The simulated value of IDMAX is 927 mA/mm and 887 mA/mm at VGS = 0 V for normal HEMT and recessed HEMT respectively. Vt is − 7.69 V and gm is 147 mS/mm for normal HEMT. Vt is − 6.38 V and gm is 156 mS/mm for recessed HEMT. RF parameters such as cut off frequency (fT) and maximum oscillation frequency (fMAX) have been simulated and the observed values are suitable for Radio Frequency applications. The observed value of fT is 106 GHz and fMAX is 134 GHz for HEMT without recessing. The observed value of fT is 118 GHz and fMAX is 162 GHz for HEMT with recessing. Noise parameters, viz. minimum noise figure (NFMIN), noise resistance (Rn) and optimum reflection coefficient (ГOPT) have been analyzed and elaborately discussed for applications of low noise and radio frequency. Observed values of noise parameters are lying in the acceptable range. The noise parameters have been simulated in the 10 GHz—110 GHz frequency range which includes the Ku, K, Ka, and Millimiter Wave (up to W band) bands defined in IEEE standard of Radio Frequency. All the simulated and observed values of DC, RF and Noise parameters were verified using Silvaco TCAD tool.
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References
Chabak KD, Walker DE, Johnson MR, Crespo A, Dabiran AM, Smith DJ, Wowchak AM, Tetlak SK, Kossler M, Gillespie JK, Fitch RC, Trejo M (2011) High-performance AlN/GaN HEMTs on sapphire substrate with an oxidized gate insulator. IEEE Electron Device Lett 32(12):1677–1679. https://doi.org/10.1109/led.2011.2167952
Chang L-C, Hsu K-C, Ho Y-T, Tzeng W-C, Ho Y-L, Wu C-H (2020) High fmax × LG Product of AlGaN/GaN HEMTs on Silicon with Thick Rectangular Gate. IEEE J Electron Devices Soc 8(481–484):2020. https://doi.org/10.1109/JEDS.2020.2987597
Chatterjee S, Sengupta A, Kundu S, Islam A (2017) Analysis of AlGaN/GaN high electron mobility transistor for high frequency application. 2017 Devices for Integrated Circuit (DevIC), Kalyani, India, pp. 196–199. https://doi.org/10.1109/DEVIC.2017.8073935
Chen C-H, Keller S, Parish G, Vetury R, Kozodoy P, Hu EL, Denbaars SP, Mishra UK (1998) High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts. Appl Phys Lett 73(21):3147–3149. https://doi.org/10.1063/1.122701
Cheng Z, Liu J, Zhou Y, Cai Y, Chen KJ, Lau KM (2005) Broadband microwave noise characteristics of high-linearity composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/ GaN HEMTs. IEEE Electron Device Lett 26(8):521–523. https://doi.org/10.1109/LED.2005.850531
Dubey SK, Islam A (2020a) Study and Analysis of AlInN/GaN Based High Electron Mobility Transistor. In: Sikander A, Acharjee D, Chanda C, Mondal P, Verma P (eds) Energy Systems, Drives and Automations. Lecture Notes in Electrical Engineering (LNEE), vol. 664, pp. 449 – 459, Springer Nature, Singapore. https://doi.org/10.1007/978-981-15-5089-8_44
Dubey, S.K. & Islam, A. (2020b). Indium Phosphide Based Dual Gate High Electron Mobility Transistor. In: Sikander, A., Acharjee, D., Chanda, C., Mondal, P., Verma, P. (eds) Energy Systems, Drives and Automations. Lecture Notes in Electrical Engineering, vol. 664, pp. 255–264, Springer Nature, Singapore. doi: https://doi.org/10.1007/978-981-15-5089-8_24
Dubey, S.K. & Islam, A. (2020c). Effect of Source, Drain and Channel Spacing from Gate of HEMT. In: Sikander, A., Acharjee, D., Chanda, C., Mondal, P., Verma, P. (eds) Energy Systems, Drives and Automations. Lecture Notes in Electrical Engineering, vol 664, pp. 81–90, Springer Nature, Singapore. doi: https://doi.org/10.1007/978-981-15-5089-8_8
Dubey, S.K. & Islam, A. (2021). AlGaN/GaN HEMT with Recessed T-Gate and Floating Metal for High Power Applications. 2021 Devices for Integrated Circuit (DevIC), 2021, pp. 216–220. https://doi.org/10.1109/DevIC50843.2021.9455871
Dubey SK, Islam A (2022) Al0.30Ga0.70N /GaN MODFET with triple-teeth metal for RF and high-power applications. Physica Scripta, 97(3), 034003, IOP publishing Ltd. https://doi.org/10.1088/1402-4896/ac50c3
Dubey SK, Sinha K, Sahu PK, Ranjan R, Pal A, Islam A (2020) Characterization of InP-based pseudomorphic HEMT with T-gate. Microsyst Technol Micro Nanosyst -Inf Storage Process Syst 26(7):2183–2191. https://doi.org/10.1007/s00542-019-04491-3
Dubey SK, Mishra M, Islam A (2021) Characterization of AlGaN / GaN based HEMT for low noise and high frequency application. Int J Numerical Model 35(1):2932, 1–12. https://doi.org/10.1002/jnm.2932
Efthymiou L, Longobardi G, Camuso G, Udrea F (2020) Bonding pad over active area layout for lateral AlGaN/GaN power HEMTs: a critical view. IEEE Trans Electron Devices 66(5):2301–2306. https://doi.org/10.1109/TED.2019.2903441
Jena K, Swain R, Lenka TR (2015) Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices. Int J Numer Model Electron Networks Devices Fields 29(1):83–92. https://doi.org/10.1002/jnm.2048
Jia Y, Xu Y, Xu R, Li Y (2017) An accurate parasitic parameters extraction method based on FW-EM for AlGaN/GaN HEMT up to 110 GHz. Int J Numer Model Electron Networks Devices Fields 31(1):e2270. https://doi.org/10.1002/jnm.2270
Lee J-W, Kuliev A, Kumar V, Schwindt R, Adesida I (2004) Microwave noise characteristics of AlGaN/GaN HEMTs on SiC substrates for broad-band low-noise amplifiers. IEEE Microwave Wirel Compon Lett 14(6):259–261. https://doi.org/10.1109/lmwc.2004.828026
Madadi R, Faez R, Marjani S (2014) DC and microwave noise characteristics of AlGaN/GaN HEMT with AlN and InGaN interlayers’, 2014 22nd Iranian Conference on Electrical Engineering (ICEE), pp.480–483. https://doi.org/10.1109/IranianCEE.2014.6999589
Mao S, Xu Y, Chen Y, Fu W, Zhao X, Xu R (2017) High Frequency noise model of AlGaN/GaN HEMTs. ECS J Solid State Sci Techno 6(11):S3072–S3077. https://doi.org/10.1149/2.0171711jss
Mishra UK, Likun S, Kazior TE, Yi-Feng Wu (2008) GaN-based RF power devices and amplifiers. proc ieee 96(2):287–305. https://doi.org/10.1109/jproc.2007.911060
Nagarajan V, Chen K-M, Chen B-Y, Huang G-W, Chuang C-W, Lin C-J, Anandan D, Wu C-H, Han P-C, Singh SK, Luong T-T, Chang EY (2020) Study of charge trapping effects on AlGaN/GaN HEMTs under UV illumination with Pulsed I-V measurement. IEEE Trans Device Mater Reliab 20(2):436–441. https://doi.org/10.1109/TDMR.2020.2987394
Nsele, S. D., Escotte, L., Tartarin, J.-G., & Piotrowicz, S. (2013). Noise characteristics of AlInN/GaN HEMTs at microwave frequencies. 2013 22nd International Conference on Noise and Fluctuations (ICNF).https://doi.org/10.1109/icnf.2013.6578989
Ottaviani A, Palacios P, Zweipfennig T, Alomari M, Beckmann C, Bierbusse D, Wieben J, Ehrler J, Kalisch H, Negra R, Vescan A, Burghartz JN (2020) Evaluation of high-temperature high-frequency GaN-based LC-oscillator components. IEEE Trans Electron Devices 67(11):4587–4591. https://doi.org/10.1109/TED.2020.3016918
Robertson, I.D., & Lucyszyn, S., (2001). RFIC and MMIC Design and technology, institution of engineering and technology; 2nd edn. London, pp. 59–72
Sakalas P, Šimukovič A, Piotrowicz S, Jardel O, Delage SL, Mukherjee A, Matulionis A (2014) Compact modelling of InAlN/GaN HEMT for low noise applications. Semicond Sci Technol 29(9):095014. https://doi.org/10.1088/0268-1242/29/9/095014
Sanabria C, Chakraborty A, Hongtao Xu, Rodwell MJ, Mishra UK, York RA (2006) The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs. IEEE Electron Device Lett 27(1):19–21. https://doi.org/10.1109/led.2005.860889
Sinha K, Dubey SK, Islam A (2020) Study of high Al fraction in AlGaN barrier HEMT and GaN and InGaN channel HEMT with In0.17Al0.83N barrier. Microsyst Technol-Micro Nanosyst-Inform Storage Proces Syst 26(7):2145–2158. https://doi.org/10.1007/s00542-019-04466-4
Sun H, Alt AR, Benedickter H, Bolognesi CR (2009) High-performance 0.1 μm gate AlGaN/GaN HEMTs on silicon with low-noise figure at 20 GHz. IEEE Electron Device Lett 30(2):107–109. https://doi.org/10.1109/LED.2008.2010339
Tasker PJ, Hughes B (1989) Importance of source and drain resistance to the maximum fT of millimeter-wave MODFETs. IEEE Electron Device Lett 10(7):291–293. https://doi.org/10.1109/55.29656
Tirelli S, Marti D, Sun H, Alt AR, Benedickter H, Piner EL, Bolognesi CR (2010) 107-GHz (Al, Ga)N/GaN HEMTs on silicon with improved maximum oscillation frequencies. IEEE Electron Device Lett 31(4):296–298. https://doi.org/10.1109/led.2009.2039847
Vendelin GD, Pavio AM, Rohde UL (2005) Microwave circuit design using linear and nonlinear techniques. A John Wiley & Sons, Inc. Publication New Jersey, 2nd edition, pp. 375–379.
Verma S, Loan SA, Alamoud AM (2017) Design and simulation of a doping-less charge plasma based enhancement mode GaN MOSFET. J Comput Electron 17(1):256–264. https://doi.org/10.1007/s10825-017-1084-6
Verma S, Loan SA, Alharbi AG (2018a) Polarization engineered enhancement mode GaN HEMT: design and investigation. Superlattices Microstruct 119:181–193. https://doi.org/10.1016/j.spmi.2018.04.041
Verma S, Loan SA, Alamoud AM, Alharbi AG (2018b) Hybrid AlGaN/GaN high-electron mobility transistor: design and simulation. IET Circuits Devices Syst 12(1):33–39. https://doi.org/10.1049/iet-cds.2017.0025
Ye PD, Yang B, Ng KK, Bude J, Wilk GD, Halder S, Hwang JCM (2005) GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric. Appl Phys Lett 86(6):063501. https://doi.org/10.1063/1.1861122
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Dubey, S.K., Islam, A. Impact of gate recessing on DC, RF and noise parameters of 6H-SiC-based Al0.30Ga0.70N/GaN HEMT for RF and low noise applications. Microsyst Technol 29, 515–525 (2023). https://doi.org/10.1007/s00542-022-05362-0
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DOI: https://doi.org/10.1007/s00542-022-05362-0