Abstract
We report a numerical simulation based design and optimization of single-junction gallium antimonide (GaSb) solar cell using the two-dimensional device simulator (SILVACO-ATLAS) under AM1.5G spectrum. We considered the gallium antimonide (GaSb) material as the absorber layer because of its low band gap and silicon (Si) as the substrate layer. Previously we showed that such GaSb solar cell offers an initial conversion efficiency (η) of 29.45% after optimization. In the present work we showed that this internal efficiency can be improved further by introducing a GaSb intrinsic layer (i-layer) in between the emitter and base layer. We optimized the thickness of this low doped intrinsic layer. We show that the efficiency of the solar cell increases by introduction of such intrinsic layer and reaches a highest efficiency value of 32.09% at 300 K with an optimized intrinsic layer thickness of 60 nm. The efficiency of our designed low cost solar cell is higher than commercial silicon based solar cell and GaAs solar cell used in space application. This study shows a new family of high efficient single junction solar cells can be fabricated to harness electrical power from IR spectrum and/or heat energy.
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The authors would like to acknowledge Prof. P. Chakraborty, Director, IIEST and Dept. of E&TCE, IIEST.
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Maji, B., Chattopadhyay, R. Design and optimization of high efficient GaSb homo-junction solar cell using GaSb intrinsic layer. Microsyst Technol 27, 3589–3598 (2021). https://doi.org/10.1007/s00542-020-05125-9
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DOI: https://doi.org/10.1007/s00542-020-05125-9