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Development of a low stress RF MEMS double-cantilever shunt capacitive switch

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Abstract

In this paper, a novel RF MEMS shunt capacitive switch with application in the Ka frequency band is proposed. The spring design and the step structure added to the beam succeeded in improving the performance of the switch and reducing the stress which results in extended life-time of the switch. Also, by optimally reducing the gap between the dielectric and the beam (without problems such as self-actuation), the actuation voltage of the switch is significantly reduced. Electromechanical and scattering parameters analysis have been done by using COMSOL Multiphysics and HFSS software, respectively. The actuation voltage of the proposed device is 9.2 V. Since the aluminum has a lower mass compared to gold, an aluminum beam has been used in the switch. Desirable scattering parameters at the resonance frequency of 33.5 GHz have been obtained which include insertion loss of − 0.3 dB and return loss of − 18 dB. The high isolation of − 57 dB verifies the improved performance of the switch. Finally, as another innovation in this paper, the effect of inductor and capacitor presence in the input of transmission line is investigated. This analysis has been done by using ADS. Results of the circuit analysis presented in this paper, help the MEMS switch designers to understand the realistic switch behavior before fabrication which considerably saves cost and time.

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Authors and Affiliations

  1. Department of Electrical and Electronics Engineering, Shiraz University of Technology, Shiraz, Iran

    Hamid Reza Ansari & Zoheir Kordrostami

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  1. Hamid Reza Ansari
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  2. Zoheir Kordrostami
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Correspondence to Zoheir Kordrostami.

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Ansari, H.R., Kordrostami, Z. Development of a low stress RF MEMS double-cantilever shunt capacitive switch. Microsyst Technol 26, 2739–2748 (2020). https://doi.org/10.1007/s00542-020-04838-1

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  • DOI: https://doi.org/10.1007/s00542-020-04838-1

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