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Characterization of InP-based pseudomorphic HEMT with T-gate

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Abstract

This paper proposes two structures of InAlAs/InGaAs-based pseudomorphic high electron mobility transistor (PHEMT): one with rectangular-gate and another with T-gate. Both the proposed PHEMTs consist of an In0.52Al0.48As supply/barrier layer and In0.53Ga0.47As channel layer built on an InP substrate. The proposed InAlAs/InGaAs-based PHEMT with rectangular-gate exhibits 1.32 × increment in drain current and 0.55 × decrement in threshold voltage compared to those of AlGaAs/GaAs-based previously proposed HEMT on GaAs substrate. This is because of the role of indium in the new materials used for the proposed device layers. The proposed InAlAs/InGaAs-based PHEMT with T-gate exhibits further improvements in DC and RF characteristics. The PHEMT with T-gate shows 1.42 ×/1.14 ×/1.4 × increment in drain current/cut-off frequency/maximum oscillation frequency respectively compared to the PHEMT with rectangular-gate. It also exhibits 0.67 × decrement in noise figure compared to that of PHEMT with rectangular-gate. All the theoretical results are verified with the simulation results obtained while analyzing the structures considered in this work. The simulation results were recorded while simulating the devices using Silvaco Atlas.

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References

  • Bolognesi CR, Dvorak MW, Chow DH (1998) High-transconductance delta-doped InAs/AlSb HFETs with ultrathin silicon-doped InAs quantum well donor layer. IEEE Electron Dev Lett 19(3):83–85. https://doi.org/10.1109/55.661172

    Article  Google Scholar 

  • Chang K, Bhattacharya P, Lai R (1990) Lattice-mismatched In0.53Ga0.47As/In0.52Al0.48As modulation-doped field-effect transistors on GaAs: molecular-beam epitaxial growth and device performance. J Appl Phy 67(7):3323–3327. https://doi.org/10.1063/1.345368

    Article  Google Scholar 

  • Chou YC et al (2002) Evolution of DC and RF degradation induced by high-temperature accelerated lifetest of pseudomorphic GaAs and InGaAs/InAlAs/InP HEMT MMICs. In: 2002 IEEE International reliability physics symposium. Proceedings. 40th annual (Cat. No.02CH37320), Dallas, TX, USA, pp 241–247. https://doi.org/10.1109/relphy.2002.996643

  • Cidronali A, Collodi G, Camprini M, Nair V, Manes G, Lewis J, Goronkin H (2002) Ultralow DC power VCO based on InP-HEMT and heterojunction interband tunnel diode for wireless applications. IEEE Trans Microw Theory Tech 50(12):2938–2946. https://doi.org/10.1109/tmtt.2002.805288

    Article  Google Scholar 

  • Deen DA, Storm DF, Meyer DJ, Bass R, Binari SC, Gougousi T, Evans KR (2014) Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates. Appl Phys Lett 105(9):093503. https://doi.org/10.1063/1.4895105

    Article  Google Scholar 

  • Dumka DC, Hoke WE, Lemonias PJ, Cueva G, Adesida I (1999) Metamorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on GaAs substrate with f/sub T/over 200 GHz. In: International electron devices meeting 1999. Technical Digest (Cat. No.99CH36318). https://doi.org/10.1109/iedm.1999.824267

  • Fay P et al (2000) Monolithic integration of InAlAs-InGaAs-InP HEMTs and InAs-AlSb-GaSb resonant interband tunneling diodes (RITDs) for high speed integrated circuits. In: 58th DRC. Device research conference. Conference Digest (Cat. No.00TH8526), Denver, CO, USA, pp 161–162. https://doi.org/10.1109/drc.2000.877132

  • Flynn JS, Xin H, Dion JA, Hutchins EL, Antunes H, Fieschi-Corso L, Brandes GR (2003) Delta doped AlGaN and AlGaN/GaN HEMTs: pathway to improved performance? Physica Status Solidi 7:2327–2330. https://doi.org/10.1002/pssc.200303313

    Article  Google Scholar 

  • Lee KW, Lin HC, Hsieh JH, Cheng YC, Wang YH (2008) Liquid phase oxidation on InAlAs and application to gate insulator of InAlAs/InGaAs HEMT lattice-matched to InP substrate. In: 2008 20th international conference on indium phosphide and related materials, pp 1–4. https://doi.org/10.1109/iciprm.2008.4702901

  • Li SS (2006) High-speed III–V semiconductor devices. Semiconductor physical electronics. Springer, New York. https://doi.org/10.1007/0-387-37766-2_16

    Book  Google Scholar 

  • Mei XB, Farkas D, Luo WB, Lin CH, Lee LJ, Liu W, Lai R (2009). InGaAs/InAlAs/InP power hemt with an improved ohimc contact and an extremely high operating voltage. In: 2009 IEEE international conference on indium phosphide and related materials, pp 204–206. https://doi.org/10.1109/iciprm.2009.5012479

  • Mei XB, Radisic V, Deal W, Yoshida W, Lee J, Dang L, Lai R (2010) Sub-50NM InGaAs/InAlAs/InP HEMT for sub-millimeter wave power amplifier applications. In: 2010 22nd international conference on indium phosphide and related materials (IPRM), pp 1–3. https://doi.org/10.1109/iciprm.2010.5516192

  • Mesquida Kusters A, Kohl A, Muller R, Sommer V, Heime K (1993) Double-heterojunction lattice-matched and pseudomorphic InGaAs HEMT with delta -doped InP supply layers and p-InP barrier enhancement layer grown by LP-MOVPE. IEEE Electron Device Lett 14(1):36–39. https://doi.org/10.1109/55.215092

    Article  Google Scholar 

  • Robertson ID, Lucyszyn S (2009) RFIC and MMIC design and technology. The Institution of Engineering and Technology, London

    Google Scholar 

  • Schleeh J et al (2012) Ultralow-power cryogenic InP HEMT with minimum noise temperature of 1 K at 6 GHz. IEEE Electron Device Lett 33(5):664–666. https://doi.org/10.1109/led.2012.2187422

    Article  Google Scholar 

  • Sleiman A, Di Carlo A, Lugli P, Zandler G (2001) Breakdown quenching in high electron mobility transistor by using body contact. IEEE Trans Electron Devices 48(10):2188–2191. https://doi.org/10.1109/16.954452

    Article  Google Scholar 

  • Suemitsu T, Enoki T, Yokoyama H, Umeda Y, Ishii Y (1998) Impact of two-step-recessed gate structure on RF performance of InP-based HEMTs. Electron Lett 34(2):220. https://doi.org/10.1049/el:19980166

    Article  Google Scholar 

  • Vandersinissen R, Schreurs D, Borghs G (2002) Influence of silicon nitride passivation on DC and RF behaviour of InP HEMTs. IN: The 10th IEEE international symposium on electron devices for microwave and optoelectronic applications, pp 172–176. https://doi.org/10.1109/edmo.2002.1174950

  • Weifeng Z, Seiyon K, Jian Z, Adesida I (2006) Thermally stable Ge/Ag/Ni Ohmic contact for InAlAs/InGaAs/InP HEMTs. IEEE Electron Device Lett 27(1):4–6. https://doi.org/10.1109/led.2005.860381

    Article  Google Scholar 

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Acknowledgements

This material is based on work supported by Defence Research and Development Organisation (DRDO) under Sanction letter no. ERIP/ER/DG-MED &CoS/990216301/M/01/1675 dated 04 July 2017. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the DRDO.

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  1. Department of Electronics and Communication Engineering, Birla Institute of Technology, Mersa, Ranchi, India

    Shashank Kumar Dubey, Krishnpriya Sinha, Pawan Kumar Sahu, Ritesh Ranjan, Atandra Pal & Aminul Islam

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  1. Shashank Kumar Dubey
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  2. Krishnpriya Sinha
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  6. Aminul Islam
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Correspondence to Aminul Islam.

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Dubey, S.K., Sinha, K., Sahu, P.K. et al. Characterization of InP-based pseudomorphic HEMT with T-gate. Microsyst Technol 26, 2183–2191 (2020). https://doi.org/10.1007/s00542-019-04491-3

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