Abstract
In this paper, the characterization of Ge4Sb1Te5 thin film device with 110 nm and 140 nm thickness was conducted. Fabrication was done using physical vapor deposition technique. The switching from amorphous to crystalline state is studied using electrical studies, whereas the Raman studies explains the structure of the film. The switching of the device is analyzed by current–voltage, resistance–voltage characteristics. Device endurance verifies this as an appropriate choice in the field of memory applications.
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We would like to acknowledge the facilities provided by Rashtreeya Vidyalaya College of Engineering in their Interdisciplinary research center (IDRC).
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Shylashree, N., Sangeetha, B.G., Thonse, A. et al. Ge4Sb1Te5 device case study for NVRAM applications. Microsyst Technol 25, 4609–4613 (2019). https://doi.org/10.1007/s00542-019-04451-x
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DOI: https://doi.org/10.1007/s00542-019-04451-x