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Analytical model development of channel potential, electric field, threshold voltage and drain current for gate workfunction engineered short channel E-mode N-polar GaN MOS-HEMT

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Abstract

In this paper an enhancement mode (E-mode) short channel N-polar GaN MOS-HEMT is proposed. In order to mitigate different short channel effects, workfunction engineering technique is applied to the gate electrode. An analytical model for channel potential, electric field threshold voltage and drain current is developed for the device and validated with Atlas TCAD simulation results. The variation of minimum channel potential and threshold voltage with respect to different channel lengths is also performed. It is observed that device with triple material gate shows better control of short channel effects as compared to single and double material gate based devices.

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Acknowledgements

This Publication is an outcome of the R&D work undertaken in the project under the Visvesvaraya PhD Scheme of Ministry of Electronics & Information Technology, Government of India, being implemented by Digital India Corporation (formerly Media Lab Asia).

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Authors and Affiliations

  1. School of Electronics, VIT-AP University, Amravati, Andhra Pradesh, 522237, India

    D. K. Panda

  2. Microelectronics and VLSI Design Group, Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Silchar, Assam, 788010, India

    D. K. Panda & T. R. Lenka

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  1. D. K. Panda
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  2. T. R. Lenka
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Correspondence to D. K. Panda.

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Panda, D.K., Lenka, T.R. Analytical model development of channel potential, electric field, threshold voltage and drain current for gate workfunction engineered short channel E-mode N-polar GaN MOS-HEMT. Microsyst Technol 28, 675–682 (2022). https://doi.org/10.1007/s00542-019-04324-3

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  • DOI: https://doi.org/10.1007/s00542-019-04324-3

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