Abstract
Graphene nano-electro-mechanical switches are promising components due to their excellent switching performance such as low pull-in voltage and low contact resistance. Mass fabrication with an appropriate counter electrode remains challenging. In this work, we report the stacking of nanocrystalline graphene (NCG) with a 70-nm dielectric separation layer. The buried NCG layer is contacted through the formation of vias and acts as actuation electrode. After metallization, the top 7.5-nm thin NCG layer is patterned to form double-clamped beams, and the structure is released by hydrofluoric acid etching. By applying a voltage between the top and buried NCG layer, a step-like current increase is observed below 1.5 V, caused by the contact of the movable beam with the buried NCG. No pull-out is observed due to the thin sacrificial layer and high beam length, resulting in low mechanical restoring force. We discuss the possible applications of the NCG stacking approach to realize nano-electro-mechanical contact switches and advanced logical components such as a AND logic.
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Acknowledgements
This work was supported by the Grant-in-Aid for Scientific Research no. 25220904, 16K13650, and 16K18090 from Japan Society for the Promotion of Science and the Center of Innovation (COI) program of the Japan Science and Technology Agency. The authors thank Wenzhen Wang for the experimental assistance, and Harold M. H. Chong, Zaharah Johari and Jamie Reynolds for the assistance with NCG growth.
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MES conceived the concept; MES, KJ, and AMMH performed the fabrication and electrical measurements; MES, and KJ, wrote the manuscript. MES, KJ and MM analyzed the data, discussed the results, reviewed the manuscript and contributed to the scientific interpretation; HM supervised the project.
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Jothiramalingam, K., Schmidt, M.E., Manoharan, M. et al. Stacking of nanocrystalline graphene for nano-electro-mechanical (NEM) actuator applications. Microsyst Technol 25, 3083–3089 (2019). https://doi.org/10.1007/s00542-018-4180-z
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DOI: https://doi.org/10.1007/s00542-018-4180-z