RF MEMS packaged switch evaluation tests up to 25 GHz
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This article presents the results of the series of experimental tests of a packaged RF MEMS switch manufactured as a chip on a silicon substrate in the Center for Materials and Microsystems of Fondazione Bruno Kessler. Experiments have been performed up to 25 GHz and included S-parameters check in different operation and environmental conditions, including variation of input power, ambient temperature and number of switching cycles. Presented RF MEMS SPST switch is a basic element of more complex reconfigurable networks such as SPxT switches, phase shifters, power attenuators etc.
This work has been supported by the Ministry of Education and Science of the Russian Federation under the Federal target program “Research and Development in Priority Directions of the Russian Science and Technology Complex in 2014–2020”; contract no. 14.579.21.0137; unique project identifier RFMEFI57916X0137. Experiments have been performed using the equipment of MIPT Shared Facilities Centre.
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