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Compact modelling-based coupled simulation of RF-MEMS networks for 5G and Internet of Things (IoT) applications

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Abstract

In this work, the exploitation of an on-purpose software library, previously presented by the author, is discussed in order to simulate the coupled behaviour of RF-MEMS (MicroElectroMechanical-Systems for Radio Frequency applications) devices and networks within a commercial integrated circuits (ICs) development framework. After the validation of the proposed tool against electromechanical experimental measurements of an RF-MEMS switch, the software library is exploited to simulate the multiphysics electromechanical and electromagnetic behaviour of a MEMS-based reconfigurable RF power step attenuator (complex network) manufactured within a surface micromachining RF-MEMS technology platform. The dynamic (transient) electromechanical measured behaviour of the MEMS switches comprised in the attenuator is well-predicted by the simulations based on the implemented compact models, proving the latter ones properly take into account all the salient features determining the coupled behaviour of MEMS devices, i.e. electromechanical transduction, elasticity, inertia, as well as dissipative effects, like gas viscous damping. Furthermore, simulation of the RF-MEMS complex network is completed by the inclusion of S-parameters (Scattering parameters) behaviour. To this purpose, frequency analysis of different attenuation levels realised by the network, depending on the configuration of several micro-switches, is performed. The case study reported in this paper represents a comprehensive exploitation example of the MEMS compact model library, aimed to the coupled electromechanical and electromagnetic simulation of RF-MEMS devices and networks within commercial ICs development tools, like Cadence, Keysight advanced design system (ADS), Mentor, and so on. Eventually, the discussion presented in this paper mentions a rather efficient solution to enable the simulation of entire hybrid circuits and blocks, composed of MEMS/RF-MEMS passive elements and standard semiconductor active circuitry (e.g. CMOS), within the same analysis and development environment.

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References

  • Behera M, Kratyuk V, De SK, Aluru NR, Hu Y, Mayaram K (2005) Accurate simulation of RF MEMS VCO performance including phase noise. IEEE JMEMS 14:313–325. https://doi.org/10.1109/JMEMS.2004.839317

    Google Scholar 

  • Dambrine G, Cappy A, Heliodore F, Playez E (1988) A new method for determining the FET small-signal equivalent circuit. IEEE T-MTT 36:1151–1159. https://doi.org/10.1109/22.3650

    Article  Google Scholar 

  • De Los Santos HJ (2002) RF Mems circuit design for wireless communications. Artech House, Norwood

    Google Scholar 

  • Del Tin L, Iannacci J, Gaddi R, Gnudi A, Rudnyi EB, Greiner A, Korvink JG (2007) Non linear compact modeling of RE-MEMS switches by means of model order reduction. In: Proceedings of IEEE TRANSDUCERS, pp. 635–638. https://doi.org/10.1109/sensor.2007.4300210

  • Gaddi R, Iannacci J, Gnudi A (2003) Mixed-domain simulation of intermodulation in RF-MEMS capacitive shunt switches. In: Proceedings of the 33rd European microwave conference, EuMC vol. 2, pp. 671–674. https://doi.org/10.1109/eumc.2003.177566

  • Gaddi R, Bellei M, Gnudi A, Margesin B, Giacomozzi F (2004) Interdigitated low-loss ohmic RF MEMS switches. In: Proceedings of NSTI nanotechnology, pp. 327–330

  • Giacomozzi F, Mulloni V, Colpo S, Iannacci J, Margesin B, Faes A (2011) A Flexible Fabrication Process for RF MEMS Devices. Rom J Inf Sci Technol ROMJIST 14:259–268

    Google Scholar 

  • Hailongk W, Guangbao S, Youbao L (2006) Lumped behavioral modeling for suspended MEMS. In: Proceedings of the 8th international conference on solid-state and integrated circuit technology ICSICT, pp. 679–681. https://doi.org/10.1109/icsict.2006.306435

  • Iannacci J (2013a) Practical guide to RF-MEMS. Wiley-VCH, Weinheim

    Book  Google Scholar 

  • Iannacci J (2013b) Compact Modeling of RF MEMS devices. In: Brand O, Fedder GK, Hierold C, Korvink JG, Tabata O (eds) System-level modeling of MEMS. Wiley-VCH, Weinheim. https://doi.org/10.1002/9783527647132.ch8

    Google Scholar 

  • Iannacci J (2015) RF-MEMS: an enabling technology for modern wireless systems bearing a market potential still not fully displayed. Springer Microsyst Technol 21:2039–2052. https://doi.org/10.1007/s00542-015-2665-6

    Article  Google Scholar 

  • Iannacci J (2017) RF-MEMS Technology for High-Performance Passives: The challenge of 5G mobile applications. IOP Publishing, Bristol. https://doi.org/10.1088/978-0-7503-1545-6

    Google Scholar 

  • Iannacci J (2018a) Internet of things (IoT); internet of everything (IoE); tactile internet; 5G—A (not so evanescent) unifying vision empowered by EH-MEMS (energy harvesting MEMS) and RF-MEMS (radio frequency MEMS). Elsevier Sens Actuators A Phys 272:187–198. https://doi.org/10.1016/j.sna.2018.01.038

    Article  Google Scholar 

  • Iannacci J (2018b) Surfing the hype curve of RF-MEMS passive components: towards the 5th generation (5G) of mobile networks. Springer Microsyst Technol. https://doi.org/10.1007/s00542-018-3718-4

    Google Scholar 

  • Iannacci J, Gaddi R, Gnudi A (2007) Non-linear electromechanical RF model of a MEMS varactor based on VerilogA© and lumped-element parasitic network. In: Proceedings of EUMC 1342-1345. https://doi.org/10.1109/eumc.2007.4405451

  • Iannacci J, Bartek M, Tian J, Gaddi R, Gnudi A (2008) Electromagnetic optimization of an RF-MEMS wafer-level package. Elsevier Sens Actuators A Phys 142:434–441. https://doi.org/10.1016/j.sna.2007.08.018

    Article  Google Scholar 

  • Iannacci J, Giacomozzi F, Colpo S, Margesin B, Bartek M (2009a) A general purpose reconfigurable MEMS-based attenuator for RF and microwave applications. In: Proceedings of IEEE EUROCON, pp. 1201–1209. https://doi.org/10.1109/eurcon.2009.5167788

  • Iannacci J, Repchankova A, Macii D, Niessner M (2009b) A measurement procedure of technology-related model parameters for enhanced RF-MEMS design. In: Proceedings of IEEE AMUEM, pp. 44–49. https://doi.org/10.1109/amuem.2009.5207609

  • Iannacci J, Repchankova A, Faes A, Tazzoli A, Meneghesso G, Dalla Betta G-F (2010a) Enhancement of RF-MEMS switch reliability through an active anti-stiction heat-based mechanism. Elsevier Microelectron Reliab 50:1599–1603. https://doi.org/10.1016/j.microrel.2010.07.108

    Article  Google Scholar 

  • Iannacci J, Gaddi R, Gnudi A (2010b) Experimental validation of mixed electromechanical and electromagnetic modeling of RF-MEMS devices within a standard IC simulation environment. IEEE JMEMS 19:526–537. https://doi.org/10.1109/JMEMS.2010.2048417

    Google Scholar 

  • Iannacci J, Huhn M, Tschoban C, Potter H (2016a) RF-MEMS technology for 5G: series and shunt attenuator modules demonstrated up to 110 GHz. IEEE Electron Device Lett 37:1336–1339. https://doi.org/10.1109/LED.2016.2604426

    Article  Google Scholar 

  • Iannacci J, Huhn M, Tschoban C, Pötter H (2016b) RF-MEMS technology for future (5G) mobile and high-frequency applications: reconfigurable 8-Bit power attenuator tested up to 110 GHz. IEEE Electron Device Lett 37:1646–1649. https://doi.org/10.1109/LED.2016.2623328

    Article  Google Scholar 

  • Iannacci J, Tschoban C, Reyes J, Maaß U, Huhn M, Ndip I, Pötter H (2016c) RF-MEMS for 5G mobile communications: a basic attenuator module demonstrated up to 50 GHz. In: Proceedings of IEEE SENSORS, pp. 1–3. https://doi.org/10.1109/icsens.2016.7808547

  • Kuenzig T, Iannacci J, Schrag G, Wachutka G (2012) Study of an active thermal recovery mechanism for an electrostatically actuated RF-MEMS switch. In: Proceedings of IEEE EuroSime, pp. 1–7. https://doi.org/10.1109/esime.2012.6191766

  • Larcher L, Brama R, Ganzerli M, Iannacci J, Margesin B, Bedani M, Gnudi A (2009) A MEMS reconfigurable quad-band class-E power amplifier for GSM standard. In: Proceedings of IEEE MEMS, pp. 864–867. https://doi.org/10.1109/memsys.2009.4805520

  • Larcher L, Brama R, Ganzerli M, Iannacci J, Bedani M, Gnudi A (2009) A MEMS reconfigurable quad-band class-e power amplifier for GSM standard. In: Proceedings of IEEE DATE, pp. 364–368. https://doi.org/10.1109/date.2009.5090689

  • Lucyszyn S (2010) Advanced RF MEMS. Cambridge University Press, Cambridge

    Book  Google Scholar 

  • Malik AF, Shoaib M, Naseem S, Riaz S (2008) Modeling and designing of RF MEMS switch using ANSYS. In: Proceedings of the 4th international conference on emerging technologies ICET, pp. 44–49. https://doi.org/10.1109/icet.2008.4777472

  • Niessner M, Schrag G, Wachutka G (2006) Extraction of physically based high-level models for rapid prototyping of MEMS devices and control circuitry. In: Proceedings of IEEE SENSORS, pp. 915–918. https://doi.org/10.1109/icsens.2007.355615

  • Niessner M, Schrag G, Wachutka G, Iannacci J (2010) Modeling and fast simulation of RF-MEMS switches within standard IC design frameworks. In: Proceedings of SISPAD, pp. 317–320. https://doi.org/10.1109/sispad.2010.5604496

  • Niessner M, Iannacci J, Peller A, Schrag G, Wachutka G (2010) Macromodel-based simulation and measurement of the dynamic pull-in of viscously damped RF-MEMS switches. In: Proceedings of eurosensors XXIV conference, pp. 78–81. https://doi.org/10.1016/j.proeng.2010.09.052

  • Niessner M, Schrag G, Iannacci J, Wachutka G (2011) Macromodel-based simulation and measurement of the dynamic pull-in of viscously damped RF-MEMS switches. Elsevier Sens Actuators A Phys 172:269–279. https://doi.org/10.1016/j.sna.2011.04.046

    Article  Google Scholar 

  • Niessner M, Schrag G, Iannacci J, Wachutka G (2012) Squeeze-film damping in perforated microstructures: modeling, simulation and pressure-dependent experimental validation. In: Proceedings of microtech conference, pp. 598–601

  • Novak E, Wan, D-S, Unruh P, Schurig M (2003) MEMS metrology using a strobed interferometric system. In: Proceedings IMEKO, pp. 178–182. https://doi.org/10.1109/icmens.2003.1222010

  • Persano A, Siciliano P, Quaranta F, Lucibello A, Marcelli R, Capoccia G, Proietti E, Bagolini A, Iannacci J (2016) Wafer-level thin film micropackaging for RF MEMS applications. In: Proceedings of DTIP, pp. 1–5. https://doi.org/10.1109/dtip.2016.7514826

  • Peyrou D, Pons P, Granier H, Leray D, Ferrand A, Yacine K, Saadaoui M, Nicolas A, Tao JW, Plana R (2006) Multiphysics softwares benchmark on ansys/comsol applied For RF MEMS switches packaging simulations. In: Proceedings of EuroSime, pp. 1–8. https://doi.org/10.1109/esime.2006.1644011

  • Sordo G, Faes A, Resta G, Iannacci J (2013) Characterization of quartz-based packaging for RF-MEMS. Proc SPIE 8763:1–9. https://doi.org/10.1117/12.2017856

    Google Scholar 

  • Tazzoli A, Autizi E, Barbato M, Meneghesso G, Solazzi F, Farinelli P, Giacomozzi F, Iannacci J, Margesin B, Sorrentino R (2009) Evolution of electrical parameters of dielectric-less ohmic RF-MEMS switches during continuous actuation stress. In: Proceedings of ESSDERC 2009, pp. 343–346. https://doi.org/10.1109/essderc.2009.5331307

  • Varadan VK (2003) RF Mems & their applications. Wiley, Hoboken

    Google Scholar 

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  1. Center for Materials and Microsystems (CMM), Fondazione Bruno Kessler (FBK), Povo, Trento, Italy

    J. Iannacci

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Iannacci, J. Compact modelling-based coupled simulation of RF-MEMS networks for 5G and Internet of Things (IoT) applications. Microsyst Technol 25, 329–338 (2019). https://doi.org/10.1007/s00542-018-3967-2

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