Abstract
This paper describes the process of selecting the most optimum Radio Frequency Micro- electro- mechanical-systems (RF-MEMS) switch design using Ashby’s methodology. The switches are compared on the basis of parameters like actuation voltage, insertion loss, isolation and switching time using material selection charts. The chart shows that a low-voltage metal-to-metal contact shunt capacitive RF-MEMS having a bridge structure with Si-GaAs substrate, electroplated gold contacts and silicon nitride dielectric layer, is the most optimum of all the switches considered.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Ashby MF (1999) Materials selection in mechanical design, 2nd edn. Butterworth-Heinemann Oxford, Waltham
Balaraman D, Bhattacharya SK, Ayazi F, Papapolymerou J (2002) Low-cost low actuation voltage copper RF-MEMS switches. In: IEEE Microwave Theory Technical Symposium 2:1225–1228
Chan R, Lesnick R, Becher D, Milton F (2003) Low-actuation voltage RF MEMS shunt switch with cold switching lifetime of seven billion cycles. J Microelectromech Syst 12:713–719
Chu CH, Shih WP, Chung SY, Tsai HC, Shing TK, Chang PZ (2007) A low actuation voltage electrostatic actuator for RF MEMS switch applications. J Micromech Microeng 17:1649–1656
Goldsmith C, Lin T-H, Powers B, Wu W-R, Norvell B (1995) Micromechanical membrane switches for microwave applications. IEEE Microw Theory Tech Symp 1:91–94
Goldsmith C, Randall J, Eshelman S, Lin TH, Denniston D, Clhen S, Norvell B (1996) Characteristics of micromachined switches at microwave frequencies. In: Microwave symposium digest, IEEE MTT-S International, p 1141–1144
Goldsmith C, Yao ZJ, Eshelman S, Denniston D (1998) Performance of low-loss RF MEMS capacitive switches. IEEE Microw Guided Wave Letters 8:269–271
Hyman D, Schmitz A, Warneke B, Hsu TY (1999) GaAs-compatible surface-micromachined RF MEMS switches. Electron Lett 35:224–226
Jaafar H, Fong LN, Yunus NAM (2011) Design and simulation of high performance RF MEMS series switch. In: Micro and nanoelectronics (RSM), IEEE Regional Symposium. p 349–353
Jensen BD, Wan Z, Chow L, Saitou K, Kurabayashi K, Volakis JL (2003) Integrated electrothermal modeling of RF-MEMS switches for improved power handling capability. In: IEEE topical conference on wireless communication technology. p 10–11
Leng G, Rebeiz GM (2001) DC-26 GHz MEMS series-shunt absorptive. In: Microwave symposium digest, IEEE MTT-S International, Vol 1. p 325–328
Liu AQ (2010) RF MEMS switches and integrated switching circuits. Springer, New York
Muldavin JB, Rebeiz GM (1999) 30 GHz tuned MEMS switches. In: Microwave symposium digest, IEEE MTT-S International. p 1511–1514
Muldavin JB, Rebeiz GM (2000) Novel series and shunt MEMS switch geometries for X-Band applications European microwave conference, Paris
Muldavin JB, Rebeiz GM (2001) Nonlinear electro-mechanical modelling of MEMS switches. In: IEEE International microwave symposium, p 2119–2122
Pacheco SP, Katehi LPB, Nguyen CT-C (2000) Design of low actuation voltage RF MEMS switch. In: Microwave symposium digest, IEEE MTT-S International, p 165–168
Rebeiz GM (2003) RF MEMS: theory, design, and technology, 3rd edn. Wiley, Hoboken
Riz JB, Muldavin JB, Tan GL, Rebeiz GM (2000) Design of X-Band MEMS microstrip, microwave conference, 30th European, p 1–4
Sharma AK, Gupta N (2014) Investigation of actuation voltage for non-uniform serpentine flexure design of RF-MEMS switch. Microsyst Technol 20:413–418
Sharma AK, Gupta N (2015) An improved design of MEMS switch for radio frequency applications. Int J Appl Electromagnet Mech 47:11–19
Shen SC, Feng M (1999) Low actuation voltage RF MEMS switches with signal frequencies from 0.25 GHz to 40 GHz. In: IEEE International Electron Device Meeting
Stefanini R, Chatras M, Blondy P, Rebeiz GM (2011) Miniature RF MEMS metal-contact switches for DC-20 GHz applications. In: microwave symposium digest (MTT)
Tan GL, Rebeiz GM (2001) DC-26 GHz MEMS series-shunt absorptive switches. IEEE Microw Theory Tech Symp 1:325–328
Ulm M, Walter T, Mueller-Fiedler R, Voigtlaender K (2000) K-band capacitive MEMS-switches, silicon monolithic integrated circuits in RF systems, digest of papers topical meeting. p 119–122
Varadan VK, Vinoy KJ, Jose KA (2002) RF MEMS and their applications. Wiley, Hoboken
Yao JJ (2000) Topical review—RF MEMS from a device perspective. J Micromech Microeng 10:9–38
Yao JJ, Chang MF (1995) A surface micromachined miniature switch for telecommunications applications with signal frequencies from DC up to 4 GHz, 8th International conference on solid-state sensors and actuators, and eurosensors I X. Stockholm, p 25–29
Yao ZJ, Chen S, Eshelman S, Denniston D, Goldsmith C (1999) Micromachined low-loss microwave switches. J Microelectromech Syst 8:129–134
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Gupta, N., Ashwin, R. Material selection methodology for radio frequency (RF) microelectromechanical (MEMS) capacitive shunt switch. Microsyst Technol 26, 3121–3128 (2020). https://doi.org/10.1007/s00542-018-3761-1
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00542-018-3761-1