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Impact of aspect ratio of nanoscale hybrid p-Ge/n-Si complementary FinFETs on the logic performance

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Abstract

We investigate the effect of aspect ratio (AR) with a given fin width (Wfin) of hybrid FinFETs at channel length of 20 nm on their digital performance using extensive numerical device and circuit simulations. The hybrid complementary FinFETs (HCFF), consist of Si channel n-FinFETs and Ge channel p-FinFETs and the performance is gauged in terms of device gain, noise margins (NMs), rise time (tr), fall time (tf) and propagation delay (td). Our findings reveal that tr and NM for our proposed HCFF inverter exhibit significant improvements of 37.31 and 8.03% compared to its corresponding Si value at aspect ratio of 5. Furthermore, the frequency of oscillations (fosc) of a nine-stage ring oscillator built using HCFF inverters shows 95.17% improvement with respect to that obtained with its equivalent Si counterpart at AR = 5 and supply voltage = 0.5 V.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, University of Engineering and Management, University Area, Plot No. III-B/5, New Town, Action Area-III, Kolkata, 700160, India

    Kallolini Banerjee

  2. Institute of Radio Physics and Electronics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata, 700009, India

    Kallolini Banerjee, Suchismita Tewari & Abhijit Biswas

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  1. Kallolini Banerjee
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  2. Suchismita Tewari
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  3. Abhijit Biswas
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Correspondence to Suchismita Tewari.

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Banerjee, K., Tewari, S. & Biswas, A. Impact of aspect ratio of nanoscale hybrid p-Ge/n-Si complementary FinFETs on the logic performance. Microsyst Technol 26, 3069–3076 (2020). https://doi.org/10.1007/s00542-017-3633-0

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