Abstract
This paper presents design and simulation of uniform structured RF MEMS capacitive shunt switch using FEM tool and HFSS software. The switches with different shaped meanders and perforations which result in less spring constant, less pull-in voltage, high isolation loss, high switching speed and low insertion loss have been designed. From the simulated results it is observed that the rectangular perforations gives the better results, when compared with square and cylindrical shaped perforations. Comparative study is done for zigzag, plus and three square shaped meander along with rectangular perforations on each structure. When the gap between the dielectric and the movable beam is 0.8 µm, the up state capacitance for HfO2 is 4.06fF and for Si3N4 is 3.80fF. The downstate capacitance for HfO2, Si3N4 is 49fF, 26.9fF respectively. The capacitance ratio is 120.6. Poly-tetra-fluoro-ethylene material is given for the movable beam whose young’s modulus is 0.4 GPa and the spring constant is calculated theoretically for each structure; by using this the pull in voltage and the settling time are calculated. Step switch with three square Meander has switching time 10.25 µs, pull in voltage as 2.45 V. By using HFSS 3-D electromagnetic model we observed the return loss (S11) is less than −60 dB, the insertion loss is less than −0.07 dB in the range of 1–40 GHz frequency and switch isolation (S21) is −61 dB at 28 GHz frequency.
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Acknowledgements
Dr.K.Srinivasa Rao would like to thank SERB (Science Engineering Research Board), Govt. of India, New Delhi, for providing partial financial support to carry out this research work under ECRA Scheme (File No: SERB/ECR/2016/000757). The authors would like to thank NMDC, supported by Govt. of India, for providing necessary design facilities through NPMASS.
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Ravirala, A.K., Bethapudi, L.K., Kommareddy, J. et al. Design and performance analysis of uniform meander structured RF MEMS capacitive shunt switch along with perforations. Microsyst Technol 24, 901–908 (2018). https://doi.org/10.1007/s00542-017-3403-z
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DOI: https://doi.org/10.1007/s00542-017-3403-z