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Design and simulation of a novel flip-chip structure for THz detector package

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Abstract

This work is intended to describe the design aspects and to characterize the functionality of a novel flip-chip (FC) structure applicable for THz camera assembling. The proposed FC structure consists of a thin-film ceramic layer sandwiched between a GaAs substrate and PCB board. There is an air chamber underneath the antenna to protect the air bridge of Schottky Diode located on GaAs substrate and improve antenna performance. In particular, we have used the novel FC structure simulation result as the excitation source for THz camera lens simulation. Even if the FC structure cause antenna performance to deteriorate, the high gain can be obtained at 0.34 THz and 0.22 THz (λ = 880 and 1360 μm) from the FEKO simulation results. The FC structure mode and the without FC structure (wire bonding structure) mode were characterized using same test system, they show good match in proposed frequency range.

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Author information

Authors and Affiliations

  1. School of Information and Electronic, Beijing Institute of Technology University, Beijing, 100081, People’s Republic of China

    Haidong Hao, Zhen Tang, Hongda Lu & Xin Lv

  2. Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing, 100029, People’s Republic of China

    Lifeng Cheng

Authors
  1. Haidong Hao
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  2. Zhen Tang
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  3. Hongda Lu
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  4. Lifeng Cheng
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  5. Xin Lv
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Correspondence to Haidong Hao.

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Hao, H., Tang, Z., Lu, H. et al. Design and simulation of a novel flip-chip structure for THz detector package. Microsyst Technol 23, 2759–2766 (2017). https://doi.org/10.1007/s00542-016-3021-1

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  • DOI: https://doi.org/10.1007/s00542-016-3021-1

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