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Studies on contact resistance in graphene based devices

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Abstract

Contact resistance is an important limiting factor for the on-state current of graphene based devices. In this paper, both transmission line method and four-probe method are applied to measure the contact resistance in graphene-metal (Cr/Au and Ti/Au) interface. The calculated contact resistivity values by both methods are concentrated at 104 Ωμm2. These two methods are compared and four-probe method showed higher stability. At last, the graphene-Ti/Au devices are annealed at 400 °C with argon and hydrogen gas flow. After annealing, the contact resistivity values are reduced to 103 Ωμm2.

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Acknowledgments

This work was supported by the Important National Science and Technology Specific Projects (No. 2011ZX02707), the National Basic Research Program of China (No. 2012CB934102), the National Science and Technology Supporting Program (No. 2012BAJ11B01), the Fund for Creative Research of NSFC (No. 61321492), the Key Project of NSFC (No. 91323304, 91123037), Shanghai Youth Science and Technology Talent Sailing project (no. 14YF1407200), and Project for Shanghai Outstanding Academic leaders (15XD1504300).

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Authors and Affiliations

  1. Science and Technology on Microsystem Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, People’s Republic of China

    Chen Liang, Yuelin Wang & Tie Li

  2. University of Chinese Academy of Sciences, Beijing, 100049, People’s Republic of China

    Chen Liang

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  1. Chen Liang
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  2. Yuelin Wang
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  3. Tie Li
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Correspondence to Tie Li.

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Liang, C., Wang, Y. & Li, T. Studies on contact resistance in graphene based devices. Microsyst Technol 22, 1943–1947 (2016). https://doi.org/10.1007/s00542-015-2616-2

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  • DOI: https://doi.org/10.1007/s00542-015-2616-2

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