Abstract
Different materials were used to optimize the desired nano-size with smooth process and faster fabrication. Gold, polysilicon and silicon were used to apply this report (experimental). SOI and Si wafers have used as a substrate and one chrome mask to build up the nanogap devices using size reduction technique. Two chrome masks have used to fabricate the proposed pattern. Electrical characterization was applied to setup the fabricated devices with different materials. Conductivity and resistivity were measured to characterize the nanogap structure with gold, polysilicon and silicon as electrodes. However, gold nanogap has recorded an increment in the conductivity, and the silicon nanogap structures have recorded an increment in the resistivity comparing with the other used materials.
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Dhahi, T.S. Nanogaps formation and characterization via chemical and oxidation methods. Microsyst Technol 22, 817–822 (2016). https://doi.org/10.1007/s00542-015-2454-2
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DOI: https://doi.org/10.1007/s00542-015-2454-2