Abstract
In this paper, the elec tromechanical modeling of a differential capacitive sensor interconnected with a floating-gate MOS (FGMOS) transistor is shown; the model was obtained using the Euler–Lagrange theory to analyze this particular physical system used as an inertial sensor. A design methodology is also shown relating all the physical parameters involved, such as: stiffness, damping associated with the capacitive structure, parasitic capacitances present in the transistor, and the maximum operating voltages to avoid pull-in effect. Cases for symmetric and non symmetric differential capacitance comb arrays are analyzed. A model comparison between conventional mass–spring–damper mechanical systems to a specific electromechanical system for capacitive sensor with its associated readout electronics is shown.
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Acknowledgments
The authors wish to thank CONACyT Project number 124103 and the Micro and Nano Technology Laboratory from the CNMN-IPN for their support.
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Abarca-Jiménez, G.S., Reyes-Barranca, M.A., Mendoza-Acevedo, S. et al. Electromechanical modeling and simulation by the Euler–Lagrange method of a MEMS inertial sensor using a FGMOS as a transducer. Microsyst Technol 22, 767–775 (2016). https://doi.org/10.1007/s00542-015-2429-3
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DOI: https://doi.org/10.1007/s00542-015-2429-3