Abstract
A silicon interposer test vehicle with through silicon vias (TSVs) is evaluated under radio frequency (RF) application from DC to 10 GHz. TSVs with 30 μm diameter and 150 μm height were fabricated with one layer RDL of 20 μm line width. A group of coplanar waveguides (CPW) are designed and tested to analyze the electrical performance of the interposer under high frequency in both the time and frequency domains. Results show that the interposer cannot be used above 1 GHz because of excessive losses and high reflections. Based on the analysis of the test results and simulation results for different CPW (coplanar waveguides) structures, it is concluded that the poor performance was mainly caused by accumulated space-charge at the SiO2–Si interface and impedance mismatch of transmission lines. Solutions that were implemented included enhancing the thickness of the SiO2 insulation layer between the metal and silicon substrate and improving the design of the transmission line. Implementation of these changes led acceptable interposer performance up to 10 GHz.
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References
Asegawa H, Furukawa M, Nai H (1971) Slow wave propagation along a microstrip line on Si-SiO2 systems. In: Proceedings of IEEE, vol 59, no 2. pp 297–299
Bogatin E (2005) Signal integrity: simplified. Publishing House of Electronics Industry, p 4
Chen Q, Bandyopadhyay T, Suzuki Y, Liu F, Sundaram V, Pucha R, Tummala R. (2011) Design and demonstration of low cost, panel-based polycrystalline silicon interposer with through-package-vias (TPVs). In: Electronic components and technology conference (ECTC). IEEE 61st, pp 855–860
Hasegawa H, Furukawa M, Yanai H (1971) Properties of microstrip line on Si-SiO2 system,” In: IEEE transactions on microwave theory and techniques, vol 19, no 11. pp 869–881
Hui CC (2009) 2-Metal-layer interposer for high-speed devices. In: Electronics packaging technology conference (EPTC). pp 311–316
Ismail K, Baba NH, Awang Z, Esa M (2006) Microwave characterization of silicon wafer using rectangular dielectric waveguide”,In: RF and microwave conference, RFM 2006. International. pp 411–415
Kato S, Tango T, Hasegawa K et al (2009) Electrical design and characterization of Si interposer for system-in-package (SiP). In: Proceedings of international electronic components and technology conference, pp 1648–1653
Kim B, Liu Y, Dickson TO et al (2009) A 10-Gb/s compact low-power serial I/O with DFE-IIR equalization in 65-nm CMOS. Solid-State Circuits 44(12):3526–3538
Li L, Su P, Xue J, Brillhart M, Lau J, Tzeng PJ, Wu ST (2012) Addressing bandwidth challenges in next generation high performance network systems with 3D IC integration. In: Electronic components and technology conference (ECTC). IEEE 62nd. pp 1040–1046
Ndip I, Curran B, Löbbicke K, Guttowski S, Reichl H, Lang K-D, Henke H (2011) High-frequency modeling of TSVs for 3-D chip integration and silicon interposers considering skin-effect, dielectric quasi-TEM and slow-wave modes. In IEEE transactions on components, packaging and manufacturing technology, vol 1. p 1627
Prodromakis T, Papavassiliou C, Toumazou C (2010) Application of Maxwell–Wagner polarization in delay lines. Microelectron J 41(1):17–24
Zhou J, Wan L, Dai F, Wang H, Song C, Du L, Yu D (2012). Accurate electrical simulation and design optimization for silicon interposer considering the MOS effect and eddy currents in the silicon substrate. In: Electronic components and technology conference (ECTC), pp 658–664)
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Daquan Yu also appreciates the support of National Natural Science Foundation of China (61176098). The authors would also like to thank the help of their workmates.
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Wang, H., Ren, X., Zhou, J. et al. High frequency characterization and analysis of through silicon vias and coplanar waveguides for silicon interposer. Microsyst Technol 22, 337–347 (2016). https://doi.org/10.1007/s00542-014-2390-6
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DOI: https://doi.org/10.1007/s00542-014-2390-6