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Three-dimensional simulation of surface topography evolution in the Bosch process by a level set method

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Abstract

A deep reactive ion etching (DRIE) process (Bosch process) is used extensively in the fabrication of microelectromechanical systems (MEMS). Modeling and simulation studies have helped improve our understanding and process design. The Bosch process consists of multiple cycles of alternating etching and deposition steps. Based on a narrow band level set method, by integrating etching simulation and deposition simulation modules, a simulation system is proposed for three-dimensional (3-D) simulation of the Bosch process with arbitrarily complex mask shapes. To verify the simulation system, a series of simulations and experiments have been performed. The simulation results are in good agreement with the experiments. The method may be used to optimize the practical Bosch process and to design and control the profile of high-aspect ratio microstructures.

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Acknowledgments

This project is partly supported by the National S&T Major Project under contract no. 2011ZX02507-001-003 and by the Science Foundation of Jiangsu Province under contract no. DZXX-149-092.

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Authors and Affiliations

  1. Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 210096, China

    Xiao-Qian Li, Zai-Fa Zhou, Wei-Hua Li & Qing-An Huang

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  1. Xiao-Qian Li
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  2. Zai-Fa Zhou
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  3. Wei-Hua Li
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  4. Qing-An Huang
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Correspondence to Qing-An Huang.

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Li, XQ., Zhou, ZF., Li, WH. et al. Three-dimensional simulation of surface topography evolution in the Bosch process by a level set method. Microsyst Technol 21, 1587–1593 (2015). https://doi.org/10.1007/s00542-014-2321-6

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  • DOI: https://doi.org/10.1007/s00542-014-2321-6

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