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Oxidized bridges technology for suspended MEMS fabrication using standard silicon wafer

Abstract

This paper presents a new method for electrically isolating released single crystal silicon MEMS structures. The technology employees double-side processing deep reactive ion etching to obtain functional high aspect ratio micromechanical structures and deep silicon oxidizing to isolate them from bulk silicon. Applicability of the technology to MEMS design was demonstrated with fabrication of the monolithic integrated bulk micromachined comb drive.

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Acknowledgements

This work was performed at Facilities Sharing Center “Micro- and Nanostructures Diagnostics” and is supported by Ministry of Science and Education of Russian Federation.

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Correspondence to A. Postnikov.

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Postnikov, A., Morozov, O.V. & Amirov, I.I. Oxidized bridges technology for suspended MEMS fabrication using standard silicon wafer. Microsyst Technol 21, 669–674 (2015). https://doi.org/10.1007/s00542-014-2080-4

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Keywords

  • Trench
  • Electrical Isolation
  • Comb Drive
  • Substrate Bias Voltage
  • Bulk Micromachining