Abstract
For the development of a small and low-cost microbolometer, wafer-level reliability characterization techniques for vacuum-level packaged wafers are introduced. Amorphous-silicon-based microbolometer-type vacuum sensors fabricated on an 8-inch wafer are bonded with a cap wafer by using an Au–Sn eutectic solder. Membrane deflection and integrated vacuum sensor techniques are independently used to characterize the hermeticity at the wafer level. For a packaged wafer with a membrane thickness below 100 μm, it is possible to determine the hermeticity via a screening test performed using an optical detector. An integrated vacuum sensor having the same structure as a bolometer pixel shows a vacuum level below 100 mTorr. All steps from the packaging process to the fine hermeticity test are implemented at the wafer level to verify that high-volume and low-cost production of the microbolometer is possible.
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Acknowledgments
This work was supported by the Metropolitan Economies Collaboration Program (R0000694) and the Daedeok Technology Business Program (Announcement 2011-343) funded by MKE (Ministry of Knowledge Economy). This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (grant number: 2012R1A1A2007707).
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Yang, C.M., Jung, H., Park, J.H. et al. Wafer-level reliability characterization for wafer-level-packaged microbolometer with ultrasmall array size. Microsyst Technol 20, 889–897 (2014). https://doi.org/10.1007/s00542-014-2072-4
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DOI: https://doi.org/10.1007/s00542-014-2072-4