Abstract
Silicon anisotropic wet etching is applied for fabricating round-shaped micro-structures in a size range of sub-microns. In this work, we demonstrate that arbitrary 2-D mask patterns having curved profile can be successfully transferred to deep-etched cavity profiles on a Si {100} wafer. The sub-micron mask is directly drawn on the Si wafer by irradiating focused ion beam to the wafer surface. Anisotropy in etch rate of Si using tetra-methyl ammonium hydroxide solution was modified and controlled by adding a surfactant Triton X-100 to the solution. Etched profile was conformal to etch mask patterns having smooth curvatures.
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Acknowledgments
The authors thank to Nanotechnology Support Project in Central Japan for the FIB and FE-SEM facility support.
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Tanaka, H., Hida, H. & Sato, K. Fabrication of curved sub-micron Si structures by a combination of anisotropic etching using surfactant-added TMAH solution and FIB direct-drawn mask. Microsyst Technol 19, 1065–1067 (2013). https://doi.org/10.1007/s00542-012-1700-0
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DOI: https://doi.org/10.1007/s00542-012-1700-0