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A low voltage vertical comb RF MEMS switch

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Abstract

Design and simulations of a novel RF MEMS switch is reported as a solution to many RF wireless applications. A new comb structure for RF MEMS switch is proposed for low voltage and high frequency operations. Isolation degree and actuation voltage, both improved by the new structure. The mechanical and electromagnetic simulation results show better performance for this new switch compared to parallel plate switch. The simulation is done by the intellisuit and HFSS softwares. The Simulation results show that the actuation voltage is decreased by 13% and the linearity of the switch displacement with respect to the actuation voltage is improved by 22% compared to the parallel plate structure. The HFSS simulation results indicate an insertion loss better than 0.33 dB at 50 GHz and isolation greater than 13.4 dB at 50 GHz.

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References

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Authors and Affiliations

  1. Department of Electrical Engineering, Urmia MEMS Lab, Urmia University, Urmia, Iran

    Samira Aghaei & Ebrahim Abbaspour-Sani

Authors
  1. Samira Aghaei
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  2. Ebrahim Abbaspour-Sani
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Correspondence to Samira Aghaei.

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Aghaei, S., Abbaspour-Sani, E. A low voltage vertical comb RF MEMS switch. Microsyst Technol 16, 919–924 (2010). https://doi.org/10.1007/s00542-010-1032-x

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  • DOI: https://doi.org/10.1007/s00542-010-1032-x

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