Abstract
In this work it is theoretically shown that thermoelastic incompatibility between Silicon structures and their native-oxide layers induces thermoelastic damping. This damping dominates in structures that are packaged in vacuum and vibrate in pure axial motion. Analytic solutions of the thermoelastic response of axially loaded laminated bars are used to determine the material parameters which affect thermoelastic damping. The analysis suggests that thin shield-layers can significantly reduce thermoelastic damping which is associated with native-oxide layers in Silicon resonators.
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Abbreviations
- A in :
-
eigenfunction amplitude
- a :
-
bar thickness
- B in :
-
eigenfunction amplitude
- b 1, b 2 :
-
constants
- C i :
-
specific heat
- D :
-
stored elastic energy density per unit volume
- ΔD :
-
mechanical energy dissipated per unit volume
- E i :
-
Young’s modulus
- \( \tilde G\left( {\gamma _{n} } \right) \) :
-
normalized variable
- g i :
-
heat generation
- \( \tilde H_{n} \) :
-
normalized variable
- h :
-
thin layer thickness
- i :
-
layer index
- In:
-
Indium
- K :
-
dimensionless ratio of the thermal conductivity
- k i :
-
thermal conductivity
- \( \tilde N\left( {\gamma _{n} } \right) \) :
-
normalized variable
- n :
-
series index
- Q :
-
quality factor
- \( \tilde R_{n} \) :
-
normalized variable
- r α :
-
dimensionless ratio of the thermal diffusivity
- SiO2 :
-
Silicon native-oxide
- SCS:
-
Single crystal Silicon
- s P :
-
entropy produced per unit volume
- T i :
-
temperature
- \( \tilde T_{i} \) :
-
normalized temperature
- T 0 :
-
ambient temperature
- t :
-
time
- \( \tilde t \) :
-
normalized time
- Z i :
-
Zener coefficient
- z :
-
vertical coordinate
- \( \tilde z \) :
-
normalized vertical coordinate
- ε xx :
-
time-harmonic uniaxial strain
- ε 0 :
-
strain amplitude
- \( \sigma _{{kk}}^{i} \) :
-
hydrostatic stress
- ω :
-
harmonic frequency of the strain
- α i :
-
thermal expansion coefficient
- \( \alpha _{i}^{*} \) :
-
thermal diffusivity
- ρ i :
-
density
- β n :
-
eigenvalues
- γ n :
-
normalized eigenvalue
- δ :
-
thicknesses ratio
- Ω2 :
-
normalized frequency
- ϕ in :
-
eigenfunctions
- χ :
-
normalized parameter
- ψ :
-
volume-averaged specific damping capacity
- ψ L :
-
local specific damping capacity
- ψ c :
-
converged value of damping
- ψ 0 :
-
normalized parameter
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Acknowledgments
The author Rashed Mahameed acknowledges the support of the Israel Ministry of Science and Technology.
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Mahameed, R., Elata, D. Shield-layers for reducing thermoelastic damping in resonating Silicon bars. Microsyst Technol 15, 323–331 (2009). https://doi.org/10.1007/s00542-008-0667-3
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DOI: https://doi.org/10.1007/s00542-008-0667-3