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Microsystem Technologies

, Volume 14, Issue 9–11, pp 1335–1342 | Cite as

A Si stencil mask for deep X-ray lithography fabricated by MEMS technology

  • Harutaka MekaruEmail author
  • Takayuki Takano
  • Yoshiaki Ukita
  • Yuichi Utsumi
  • Masaharu Takahashi
Technical Paper

Abstract

We succeeded in making a Si stencil mask for deep X-ray lithography (DXL) by using MEMS fabrication technologies. In order to make this mask, a 200 μm thick Si wafer was etched through its entire thickness where the remaining silicon served as the absorber for the mask. The minimum line width on the mask was 20 μm. DXL experiments were executed by using this Si stencil mask on the beamline BL2 at the NewSUBARU SR facility of the Laboratory of Advanced Science and Technology for Industry, University of Hyogo. In our experiment we succeeded in the X-ray exposure of PMMA sheets through their entire thicknesses of 0.5 and 1 mm. This means a success in line/space patterning with 20 μm line width that can lead to the fabrication of PMMA structure of maximum aspect ratio of 50. Moreover, the sticking was prevented by substituting water with hydrofluoroether employed for after-develop wash operation This Si stencil mask enabled a transcript of more precise pattern using the beamline BL2 at the NewSUBARU SR facility as compared with results from a stainless stencil mask and an Au/polyimide mask.

Keywords

PMMA PMMA Sheet Bosch Process Exposure Stage Stencil Mask 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Notes

Acknowledgement

This research was executed using the NewSUBARU SR facility of the Laboratory of Advanced Science and Technology for Industry (LASTI). We would like to thank staff of LASTI.

References

  1. Ando A, Amano S, Hashimoto S, Kinoshita H, Miyamoto S, Mochizuki T, Niibe M, Shoji Y, Terasawa M, Watanabe T, Kumagai N (1998) Isochronous storage ring of the New SUBARU project. J Synchrotron Rad 5:342–344CrossRefGoogle Scholar
  2. Henke LB, Gullikson ME, Davis CJ (1993) X-Ray interactions: photoabsorption, scattering, transmission, and reflection at E = 50–30,000 eV, Z = 1–92. Atomic Data Nuclear Data Tables 54(2):181–342CrossRefGoogle Scholar
  3. Lärmer F, Schilp A (1992) Method of anisotropically etching silicon. U.S. Patent No. 5501893, German Patent DE4241045Google Scholar
  4. Mekaru H, Takano T, Awazu K, Maeda R (2006) Fabrication of a Si stencil mask for the X-ray lithography using a dry etching technique. IOP J Phys Conf Series 34:859–864CrossRefGoogle Scholar
  5. Utsumi Y, Kishimoto T (2005) Large area and wide dimension range x-ray lithography for lithographite, galvanoformung, and abformung process using energy variable synchrotron radiation. J Vac Sci Technol B 23(6):2903–2909CrossRefGoogle Scholar

Copyright information

© Springer-Verlag 2007

Authors and Affiliations

  • Harutaka Mekaru
    • 1
    Email author
  • Takayuki Takano
    • 1
  • Yoshiaki Ukita
    • 2
  • Yuichi Utsumi
    • 2
  • Masaharu Takahashi
    • 1
  1. 1.Advanced Manufacturing Research InstituteNational Institute of Advanced Industrial Science and TechnologyTsukubaJapan
  2. 2.Laboratory of Advanced Science and Technology for IndustryUniversity of HyogoAko-gunJapan

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