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Germanium resistors for RF MEMS based microsystems

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Abstract

This paper introduces the use of germanium as resistive material in RF MicroElectroMechanical (MEMS) devices. Integrated resistors are indeed highly required into RF MEMS components, in order to prevent any RF signal leakage in the bias lines and also to be compatible with ICs. Germanium material presents strong advantages compared to others. It is widely used in microtechnologies, notably as an important semi-conductor in SiGe transistors as well as sacrificial or structural layers and also mask layer in various processes (Si micromachining especially). But it also presents a very high resistivity value. This property is particularly interesting in the elaboration of integrated resistors for RF components, as it assures miniaturized resistors in total agreement with electromagnetic requirements. Its compatibility as resistive material in MEMS has been carried out. Its integration in an entire MEMS process has been fruitfully achieved and led to the successful demonstration and validation of integrated Ge resistors into serial RF MEMS variable capacitors or switches, without any RF perturbations.

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  1. LAAS-CNRS, Univ. de Toulouse, 7. Av. du Colonel Roche, 31077, Toulouse, France

    K. Grenier, C. Bordas, S. Pinaud, L. Salvagnac & D. Dubuc

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  1. K. Grenier
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  2. C. Bordas
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  3. S. Pinaud
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  4. L. Salvagnac
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  5. D. Dubuc
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Correspondence to K. Grenier.

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Grenier, K., Bordas, C., Pinaud, S. et al. Germanium resistors for RF MEMS based microsystems. Microsyst Technol 14, 601–606 (2008). https://doi.org/10.1007/s00542-007-0448-4

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  • DOI: https://doi.org/10.1007/s00542-007-0448-4

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