Abstract
A variety of different photo resists are used for fabrication of MEMS. Presently good results were reported for SU-8, a chemically amplified negative tone photoresist. But SU-8 has a disadvantage for some applications in LIGA technique, especially in the X-ray mask fabrication. After processing the finished resist pattern are hardly soluble from the substrate. This paper will briefly describe the current status of the development of the new negative tone photoresist CAR 44 whose big advantage is the easy removableness of the cross linked pattern.
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Acknowledgments
The authors would like to thank all participants and contributors to this work, especially to co-workers from BESSY GmbH and Allresist GmbH.
This research was partially supported by the initiative of the Federal Ministry of Education (BMBF), Berlin.
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This work widely uses the contents of the presentation “A New Removable Resist for High Aspect Ratio Applications” to the High Aspect Ratio Micro Structure Technology workshop HARMST 2005 held in Gyeongyu (Republic of Korea), June 10–13, 2005.
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Schirmer, M., Perseke, D., Zena, E. et al. A new removable resist for high aspect ratio applications. Microsyst Technol 13, 335–338 (2007). https://doi.org/10.1007/s00542-006-0189-9
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DOI: https://doi.org/10.1007/s00542-006-0189-9