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Horizontal buried channels in monocrystalline silicon

Abstract

This paper reports, horizontal buried channels in monocrystalline silicon. Those channels are few microns wide and height and several hundred microns long. The main applications for those buried channels are micro-fluidic networks for MEMS devices and cooling systems for integrated circuits. Their fabrication is based on integrated circuit standard processes such as selective monocrystalline epitaxial growth and high temperature annealing. The major interest of the method is its compatibility with integrated circuit manufacturing technology.

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Correspondence to O. De Sagazan.

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De Sagazan, O., Denoual, M., Guil, P. et al. Horizontal buried channels in monocrystalline silicon. Microsyst Technol 12, 959–963 (2006). https://doi.org/10.1007/s00542-006-0177-0

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Keywords

  • Monocrystalline Silicon
  • Selective Epitaxial Growth
  • Thermal Silicon Oxide
  • Selective Epitaxy
  • Tetrachlorosilane